Canon Kabushiki Kaisha

Seiichi Tamura

Hiroshi Yuzurihara

Ryuichi Mishima

Takeshi Ichikawa

Kouhei Hashimoto

Aiko Kato

Takanori Watanabe

Kenji Makino

Shigeru Nishimura

Masami Ikeda

Hiroshi Sugitani

Shigeyuki Matsumoto

Yasushi Nakata

Yasuhiro Naruse

Masahiko Kubota

Tetsuya Itano

Akira Okita

Teruo Ozaki

Mineo Shimotsusa

Yusuke Onuki

Masatsugu Itahashi

Masaaki Izumida

Nobuyuki Endo

Yukihiro Hayakawa

Genzo Momma

Katsunori Hirota

Masaaki Okada

Takumi Ogino

Nobuaki Kakinuma

Yutaka Akino

Masashi Kusukawa

Koichi Tazoe

Masato Fujita

Mayu Ishikawa

Yoshinori Kawasaki

Masatsuga Itahashi

In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

Solid-state image pickup device image pickup system using solid-state image pickup device and method of manufacturing solid-state image pickup device

Solid-state image pickup device, image pickup system using solid-state image pickup device, and method of manufacturing solid-state image pickup device

A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating film to cover the gates of the first and second MOSs, etching the first insulating film in the peripheral circuit area in a state that the pixel area is masked to form a side spacer on a side face of the gate of the second MOS, etching the first insulating film in the pixel area in a state that the peripheral circuit area is masked, and forming the second insulating film to cover the gates of the first and second MOSs and the side spacers.

Solid-state image sensor, method of manufacturing the same, and camera

A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.

Photoelectric conversion device and manufacturing method of the same

In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.

Photoelectric conversion apparatus and method of manufacturing photoelectric conversion apparatus

The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

Photoelectric conversion device and manufacturing method thereof

An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

Photoelectric conversion device, method for manufacturing the same and image pickup system

The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

Image sensing device and image sensing system

A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle &#x3b8; with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5&#xb0;&#x2266;&#x3b8;&#x2266;4.5&#xb0;, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle &#x3b8; to a direction perpendicular to the principal plane within a range of 0&#xb0;&#x3c;&#x3c6;&#x2266;45&#xb0;, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle &#x3b1; with the two plane direction within a range of 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;.

Photoelectric conversion device, its manufacturing method, and image pickup device

A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration Ccorresponding to a peak of the impurity concentration in the first impurity region, a concentration Ccorresponding to a peak of the impurity concentration in the second impurity region and a concentration Ccorresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship:C2&#x3c;C3&#x3c;C1.

Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system

Growing community of inventors

Yokohama, Japan

Seiichi Tamura