Ulvac, Inc.

Samsung Electronics Co., Ltd.

Jatco Corporation

F.t.l. Co., Ltd.

Seiichi Takahashi

Kengo Tsutsumi

Seung-Ki Chae

Ki-Young Yun

No-Hyun Huh

Kwang-Myung Lee

Masayuki Satou

Shinji Yanagisawa

Sung-Wook Park

Kyuzo Nakamura

Jung-Hyun Hwang

Mikio Takagi

Yoshiaki Ueda

Il-Kyoung Kim

Wan-Goo Hwang

Woo-Seok Kim

Jae-Wook Kim

Jae-Hyuck An

Hiroaki Inoue

Myeong-Jin Kim

Yutaka Miura

Takehisa Miyaya

Yoshiyasu Tajima

Soo Boo Lim

Yohei Ono

Kyoung-Ho Jang

A processing gas is introduced to remove an oxide film on the surface of a silicon substrate. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NHgas, Ngas and NFgas are introduced, allowing NHFto act on the oxidized surface of the silicon substrate, thereby forming (NH)SiF. The resulting (NH)SiFis sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate

Vacuum processing method and vacuum processing apparatus

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50&#xb0; C. or less. Hydrogen treatment is then carried out a temperature of 100&#xb0; C. or more to bond the dangling bonds with hydrogen. A jigthat has been used is again used for loading new semiconductor silicon wafer(s). The wafer(s) on the jigis subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film. After treatment of hydrogen bonding, inert gas having temperature of from 0 to &#x2212;30&#xb0; C. is injected into reaction vesseland/or treatment preparing vessel, in which a native oxide film has been removed.

Method for surface treating semiconductor

The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.

Vacuum processing apparatus

In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamberexcessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

Etching method

A solenoid valve control system controlling a solenoid valve which changes a solenoid valve state between an opened state and a closed state by applying pulsed electric power thereto. The solenoid valve control system includes an ammeter for detecting a current value applied to the solenoid and a control device for controlling electric power supplied to the solenoid. The control device has a duty control section which controls an ON-OFF ratio of pulsed electric power repeatingly applied to the solenoid and a correcting section which corrects an output from the duty control section according to the current value detected by the ammeter. Therefore, the line pressure is kept at a precise target value.

Solenoid valve control system

In an electronically controlled automatic power transmission of an automotive vehicle in which an electronic control unit is installed at a predetermined position of the vehicle remote from a main frame of the automatic power transmission, a characteristic storage unit is installed on the main frame of the automatic power transmission, the characteristic storage unit has a memory which stores inherent characteristics of controllable devices and components such as frictional engagement elements, solenoids, and sensors installed in the main frame of the automatic power transmission and is electrically connected to the electronic control unit.

Electronic control apparatus for automatic power transmission of

Growing community of inventors

Shizuoka, Japan

Seiichi Takahashi