Osaka University

Tokyo Electron Limited

Jsr Corporation

Daikin Industries, Ltd.

Japan Atomic Energy Research Institute

Seiichi Tagawa

Akihiro Oshima

Seiji Nagahara

Tomoki Nagai

Takehiko Naruoka

Hisashi Nakagawa

Kousuke Yoshihara

Mark H Somervell

Michael Carcasi

Benjamen M Rathsack

Satoru Shimura

Wallace Paul Printz

Shinichiro Kawakami

Gousuke Shiraishi

Masaru Tomono

Masaki Sugimoto

Masahito Yoshikawa

Shuhei Seki

Satoshi Tsukuda

Tomio Echigo

A temperature distribution learning apparatus learns a temperature distribution including a temperature at least a first point in air of a target space. The temperature distribution learning apparatus includes a learning model. The learning model learns the temperature distribution, which is an objective variable, and a thermal image, which is an explanatory variable and is related to the target space, in association with each other. The learning model learns based training data including the temperature distribution and the thermal image.

Temperature distribution learning apparatus

A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9&#xd7;C1&#x3c;C2&#x3c;10&#xd7;C1 relative to a ratio (C2=A2/B2) of a value (A2) representing an acid in flood exposure to a value (B2) representing a base in the flood exposure.

Resist pattern formation method

A resist patterning method includes a resist layer forming step, a patterned exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer is formed on a substrate. In the patterned exposure step, a sensitizer is produced from a sensitizer precursor in the resist layer. In the flood exposure step, flood exposure is performed on the resist layer in which the sensitizer has been produced to produce an acid from a strong acid generator. In the developing step, the resist layer is developed. The patterned exposure step includes: producing a strong acid from the strong acid generator; producing the sensitizer through a reaction between the strong acid and the sensitizer precursor; producing a weak acid through a reaction between the strong acid and a base; and producing the sensitizer through a reaction between the weak acid and the sensitizer precursor.

Resist patterning method and resist material

A resist patterning method according to the present invention includes: a resist layer forming step Sof forming a resist layer () on a substrate (); an activating step Sof activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step Sof inhibiting decay of the activity of the resist layer; a latent pattern image forming step Sof forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step Sof developing the resist layer.

Resist patterning method, latent resist image forming device, resist patterning device, and resist material

Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

Photo-sensitized chemically amplified resist (PS-CAR) simulation

A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A). 

Chemically amplified resist material, pattern-forming method, compound, and production method of compound

A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0&#xd7;10m.

Resist-pattern-forming method and chemically amplified resist material

A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Substrate treatment system

A resist patterning method according to the present invention includes: a resist layer forming step Sof forming a resist layeron a substrate; an activating step Sof activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step Sof inhibiting decay of the activity of the resist layer; a latent pattern image forming step Sof forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step Sof developing the resist layer.

A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Pattern-forming method

A method by which ceramic nanowires with diameters ranging from several to several tens of nanometers can be synthesized with improvements in the shape retention of the nanowires and the yield of conversion to ceramic, which method comprises the steps of forming a thin film of a silicon-containing polymer usable as a ceramic precursor, irradiating the thin film with ion beams to form cylindrical crosslinked portions, extracting the un-crosslinked portions with a solvent to produce nanowires of the silicon-containing polymer, irradiating the nanowires with an ionizing radiation so that they are crosslinked again, and firing the re-crosslinked nanowires.

Growing community of inventors

Suita, Japan

Seiichi Tagawa