Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Seiichi Suenaga

Tomohiro Suetsuna

Maki Yonetsu

Koichi Harada

Tomoko Eguchi

Kouichi Harada

Toshihide Takahashi

Hiroki Inagaki

Yasuhiro Goto

Sachiko Fujisawa

Yoshihiko Nakano

Yasuyuki Hotta

Kunihiko Wada

Kazuhiro Yasuda

Naoyuki Nakagawa

Masako Nakahashi

Norihiro Tomimatsu

Takayuki Fukasawa

Hiromitsu Takeda

Takashi Sano

Shinichi Onodera

Akihiro Tsujimura

Hideyuki Ohzu

Hitomi Saito

Naoto Ito

Atsushi Kamata

Hideyuki Oozu

Yasushi Hattori

Hideyuki Sugiyama

Shinsuke Matsuno

Atsuhiro Kinoshita

Shinya Sakurada

Mutsuki Yamazaki

Takashi Kuboki

Masayuki Itoh

Toshiro Hiraoka

Shinji Murai

Fumihiko Aiga

Yumi Fukuda

Keiko Albessard

Wu Mei

Chika Tanaka

Makoto Higaki

Tsutomu Okutomi

Takashi Yamauchi

Takayuki Naba

Takashi Amano

Noritsugu Shiokawa

Junji Koga

Mitsuru Ishibashi

Kenji Essaki

Ryosuke Yagi

Hiroaki Kinouchi

Shinji Arai

Mikio Okawa

Miho Maruyama

Mitsutaka Homma

Nao Kobayashi

Tatsuo Yamazaki

Yuichi Motoi

Makoto Shirokane

Fumihiko Yoshimura

Tomoyuki Oozeki

Atsuhiko Izumi

Shozi Niwa

Shota Yamamoto

Tetsuzou Sakamoto

Shigeru Miyakawa

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (M/M) of a mass Mof Ti to a mass Mof the first element being 0.5 or more and a Ti-poor region in which the ratio (M/M) being 0.1 or less.

Bonded body, circuit board, semiconductor device, and method for manufacturing bonded body

A bonded body includes a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

Bonded body including titanium alloy at bonding boundary

According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.

Brazing material, bonded body, ceramic circuit board, and method for manufacturing bonded body

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

Bonded assembly, and ceramic circuit substrate and semiconductor device using the same

A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 μm in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 μm is favorably not more than 1%.

Bonded body, ceramic copper circuit board, method for manufacturing bonded body, and method for manufacturing ceramic copper circuit board

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

Bonded body, ceramic copper circuit substrate, and semiconductor device

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

Bonded body, circuit board, and semiconductor device

Provided is a method for producing a magnetic material. The method includes preparing magnetic metal particles containing at least one magnetic metal selected from a first group consisting of Fe, Co and Ni, and at least one non-magnetic metal selected from a second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, Ba, Sr, Cr, Mo, Ag, Ga, Sc, V, Y, Nb, Pb, Cu, In, Sn and rare earth elements, pulverizing and reaggregating the magnetic metal particles, and thereby forming composite particles containing a magnetic metal phase and an interstitial phase, and heat-treating the composite particles at a temperature of from 50&#xb0; C. to 800&#xb0; C. The particle size distribution of the magnetic metal particles in the preparing magnetic metal particles has two or more peaks.

Method for producing magnetic material

A vapor separator in an embodiment is arranged between a first space and a second space, and is used to allow vapor existing in the first space to permeate the second space by making a vapor pressure in the second space lower than a vapor pressure in the first space. The vapor separator in the embodiment includes: a porous body having a first face, a second face opposite to the first face, and fine pores passing from the first face to the second face; and a soluble absorbent existing in the fine pores of the porous body.

Vapor separator and dehumidifier using the same

A vapor separator in an embodiment is arranged between a first space and a second space, and is used to allow vapor existing in the first space to permeate in the second space by making a vapor pressure in the second space lower than a vapor pressure in the first space. The vapor separator in the embodiment includes: a porous body including a first face in contact with the first space and having a convexo-concave structure, a second face in contact with the second space, and fine pores passing to the second face from at least wall of the first face which constitutes the convexo-concave structure; and water existing in the fine pores of the porous body.

The soft magnetic material of embodiments includes flattened magnetic metal particles including at least one magnetic metal selected from iron (Fe), cobalt (Co) and nickel (Ni), each of the flattened magnetic metal particles having a thickness of from 10 nm to 100 &#x3bc;m, an aspect ratio of from 5 to 10,000, and a lattice strain of from 0.01% to 10%, and being oriented with magnetic anisotropy in one direction within aligned flattened surface; and an interposed phase existing between the flattened magnetic metal particles and including at least one of oxygen (O), carbon (C), nitrogen (N) and fluorine (F).

Soft magnetic material, rotating electric machine, motor, and generator

Provided is a magnetic material including a plurality of flat particles containing a magnetic metal, and a matrix phase disposed around the flat particles and having higher electrical resistance than the flat particles. In a cross-section of the magnetic material, the aspect ratio of the flat particles is 10 or higher. If the major axis of one of the flat particles is designated as L and the length of a straight line connecting two endpoints of the flat particle is designated as W, the proportion of the area surrounded by the outer peripheries of parts in which flat particles satisfying the relationship: W &#x2264;0.95&#xd7;L are continuously laminated, is 10% or more of the cross-section.

Magnetic material and device

A fuel synthesis catalyst of an embodiment for hydrogenating a gas includes at least one selected from the group consisting of; carbon dioxide and carbon monoxide, the catalyst comprising, a base material containing at least one oxide selected from the group consisting of; AlO, MgO, TiO, and SiO, first metals containing at least one metal selected from the group consisting of; Ni, Co, Fe, and Cu and brought into contact with the base material, and a first oxide containing at least one selected from the group consisting of; CeO, ZrO, TiO, and SiOand having an interface with each of the first metals and the base material. The first metals exist on an outer surface of the base material, and on a surface of the base material in fine pores having opening ends on the outer surface of the base material and inside the base material. The first metals and the first oxide exist in the fine pores. The first metals have interfaces with the base material in the fine pores. The first metals exist inside the base material.

Fuel synthesis catalyst and fuel synthesis system

The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0&#x2264;I/I&#x2264;0.01 and 6.7&#x2264;(I/I)/C. In those conditional formulas, I, Iand Iare intensities of the maximum peaks in the ranges of 1200 to 1240 cm, 3570 to 3610 cmand 635 to 655 cm, respectively, and Cis a weight percent of Mn contained the phosphor.

Phosphor, producing method thereof and light-emitting device employing the phosphor

A magnetic metal particle aggregate includes a plurality of magnetic metal particles including at least one magnetic metal selected from a first group consisting of Fe, Co, and Ni. The plurality of magnetic metal particles are partly bound with each other, and an average particle diameter of the plurality of magnetic metal particles is 10 nm or more and 50 nm or less. The magnetic metal particle aggregate has an average particle diameter of 15 nm or more and 200 nm or less.

Magnetic metal particle aggregate and radio wave absorber

Growing community of inventors

Yokohama, Japan

Seiichi Suenaga