Disco Corporation

Seiichi Sai

Joel Koerwer

There is provided a wafer for examination that is a wafer for examination with which energy distribution in a region of a light condensing spot of a laser beam with which irradiation is carried out from the upper surface side of a wafer is checked, and is a wafer for examination in which a first metal layer and a second metal layer different in specific heat or a melting point are formed over an upper surface of a wafer. In an examination method of energy distribution, the energy distribution of the laser beam is checked based on a processing mark formed in the first and second metal layers of the wafer for examination.

Wafer for examination and examination method of energy distribution

There is provided a condensing point position detecting method of detecting a position in an optical axis direction of a condensing point of a laser beam condensed by a condenser of a laser processing apparatus. The condensing point position detecting method includes: an irradiation mark forming step of forming a plurality of irradiation marks in a substrate by irradiating the substrate held by a chuck table with the laser beam while moving the condenser in the optical axis direction with respect to the substrate; and a condensing point position detecting step of detecting an irradiation mark having a proper shape from the plurality of irradiation marks formed in the substrate, and detecting the position of the condensing point forming the proper irradiation mark as a position of an accurate condensing point.

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Tokyo, Japan

Seiichi Sai