Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kabushiki Kaihsa Toshiba

Seiichi Omoto

Atsuko Sakata

Kazuyuki Higashi

Masahiko Hasunuma

Tomio Katata

Masaaki Hatano

Masaki Yamada

Junichi Wada

Naofumi Nakamura

Soichi Yamashita

Kazuya Kinoshita

Kazuaki Nakajima

Hiroshi Toyoda

Hisashi Kaneko

Tadashi Iguchi

Hirokazu Ezawa

Yoshihiro Uozumi

Kazuyuki Masukawa

Yoshihiro Yanai

Toshiyuki Morita

Osamu Yamane

Naomi Fukumaki

Ming Hu

Takanobu Itoh

Hitomi Yamaguchi

Toshiyuki Takewaki

Kazumasa Ito

Ryota Nakanishi

A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality of diffusion layers. The gate electrode is on the gate insulating film. The first contacts include silicide layers of the same material which are on the gate electrode and the diffusion layers respectively, and first metal layers on the silicide layers. The second contacts are on the first contacts.

Semiconductor device and manufacturing method thereof

According to an embodiment, a semiconductor memory device comprises: a memory string comprising a plurality of memory cells connected in series therein; and a contact electrically connected to one end of the memory string. The memory string comprises a plurality of control gate electrodes, and a semiconductor layer. The contact comprises a contact layer, the contact layer having a plate-like shape whose longer direction is a first direction parallel to the substrate, and the contact layer having its lower surface electrically connected to the one end of the semiconductor layer. Moreover, the contact layer includes a metal layer, a silicon based layer, and a second conductive layer. The metal layer includes tungsten. The silicon based layer includes a material including silicon. The second conductive layer covers side surfaces of the metal layer and the silicon based layer.

Semiconductor memory device having memory cells provided in a height direction

A semiconductor memory device according to an embodiment comprises a stacked body, a semiconductor layer, a charge accumulation layer, and a slit portion. The stacked body includes a plurality of control gate electrodes stacked above a substrate. The semiconductor layer has one end thereof connected to the substrate, and faces the plurality of control gate electrodes. The charge accumulation layer is positioned between the control gate electrode and the semiconductor layer. The slit portion extends in a direction of the substrate from a surface of the stacked body, wherein the slit portion has its longitudinal direction in a direction intersecting the first direction.

Semiconductor memory device and method of manufacturing the same

A semiconductor device according to the present embodiment includes a first wiring part located above a substrate and made of a first metal material. A second wiring part is provided as being superimposed on the first wiring part and having a width substantially equal to that of the first wiring part. A first resistivity of the first wiring part is lower than a second resistivity of the second wiring part when the first and second wiring parts have a first width. The second resistivity is lower than the first resistivity when the first and second wiring parts have a second width larger than the first width. The semiconductor device includes both of an area in which the first and second wiring parts have the first width and an area in which the first and second wiring parts have the second width.

According to one embodiment, a semiconductor device includes a polysilicon film formed above a semiconductor substrate, and a silicide film of a metal formed on the polysilicon film. The semiconductor device of the embodiment includes an oxide film of the metal formed above the silicide film, and a film containing tungsten or molybdenum formed on the oxide film.

Semiconductor device

According to one embodiment, a method for manufacturing a semiconductor device includes forming a stacked body on a substrate. The stacked body includes a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers. The method includes making a hole to pierce the stacked body. The method includes making a slit to divide the stacked body. The method includes making a gap between the first conductive layers by removing the second conductive layers by etching via the slit or the hole. The method includes forming a memory film including a charge storage film at a side wall of the hole. The method includes forming a channel body on an inner side of the memory film inside the hole.

Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layers

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Semiconductor device having oxidized metal film and manufacture method of the same

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

A method for fabricating a semiconductor device, includes forming a first dielectric film above a substrate, forming an opening in the first dielectric film, forming a catalytic characteristic film using at least one of a metal having catalytic characteristics and a conductive oxide having catalytic characteristics as its material on sidewalls and at a bottom of the opening, depositing a conductive material film using a conductive material in the opening in which the catalytic characteristic film is formed on the sidewalls and at the bottom, removing the catalytic characteristic film formed on the sidewalls of the opening, and forming a second dielectric film above the first dielectric film and the conductive material film after the removing.

Method for fabricating semiconductor device

There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.

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Kanagawa, Japan

Seiichi Omoto