Kabushiki Kaisha Toshiba

Sumco Corporation

Citizen Watch Company, Ltd.

Nippon Electric Co., Ltd.

Seiichi Nakamura

Tetsuya Nakai

Yoshiro Aoki

Tooru Kamibayashi

Kohki Takato

Hideki Nishihata

Eita Shuto

Eiji Kamiyama

Riyuusuke Kasamatsu

Yukio Komatsu

Minoru Watanabe

Kazuhiko Taira

Hideki Mimura

Yuji Nagai

Taku Kato

Toshimitsu Kaneko

Yutaka Kashihara

Tatsuyuki Matsushita

Atsushi Ishihara

Hideaki Sato

Yasufumi Tsumagari

Shigeru Morokawa

Hiroshi Isozaki

Yasuhiro Ishibashi

Keiichi Teramoto

Haruhiko Toyama

Akira Bando

Toshinari Takahashi

Kazunari Kume

Masahiko Mawatari

Munetaka Tamaru

Yoshiki Terashima

Takayasu Machida

Kazuo Mera

Hideshi Ohno

Nobuo Tsumaki

Takero Kobayashi

Kosuke Haruki

Tomoji Watanabe

Takao Kasai

Yoshikata Tobita

Naoto Ogasawara

Yoichiro Yamagata

Masami Hoshi

Ken-ichi Yoshioka

Kenji Kurimura

Yoichi Kurosawa

Tsuneo Hayashi

Kazunori Tsubuku

Isao Nishigaya

According to one embodiment, an information processing apparatus includes a capture module which acquires video data and audio data output from a first module to a second module, a time stamp module which respectively adds time information to the video data and audio data acquired by the capture module, an effect module which performs correction processing of at least one of the video data and audio data acquired by the capture module, and a synchronization output module which synchronizes and outputs the video data and audio data at least one of which has undergone the correction processing by the effect module to the second module based on the time information added by the time stamp module.

Information processing apparatus, effect program, and content correction processing method

A contents player including: a reading unit which accesses data carrier and reads out contents including multimedia data and a script from the data carrier; a playing unit which plays the multimedia data included in the contents; an interpreting unit which interprets the script included in the contents; an access unit which accesses an internal or external storing device; an acquiring unit which acquires an access ID of the contents from the read contents or the data carrier when the script includes an access instruction description which instructs access to a specific storing region in the storing device: and a determining unit which determines whether the access to the specific storing region is permitted or not, on the basis of the acquired access ID.

Contents player, program, and method

A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

Method for manufacturing SOI wafer

A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300&#xb0; C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

Method for manufacturing SIMOX wafer

SOI substrate, silicon substrate therefor and it's manufacturing method

A content reproduction apparatus including reproduction unit configured to reproduce content data item stored in recording medium storing first server identifier and content data item including destination identifier, reads first server identifier from recording medium, to store first server identifier in table, certifies first server corresponding to first sever identifier, receives first server policy from first server being certified, first server policy including second server identifier redirecting to second server, to store second server identifier in table, certifies second server, acquires destination identifier while reproduction unit reproduces content data item, determines whether destination identifier being acquired is equal to first identifier stored in table, and accesses to second server, when at least destination identifier is equal to first identifier and second server is certified.

Content reproduction apparatus, and content reproduction method

A content playback apparatus includes an SKF selecting unit that selects one segment key file from plural segment key files recorded in a DVD media at a time of playback of a content of the sequence key section, a data selecting unit that selects each content corresponding to a segment number of each key entry registered in the selected segment key file, a moving picture data decrypting unit that decrypts the selected moving picture data by a segment key corresponding to the segment number, and a decoder that plays back the decrypted moving picture data.

Apparatus, method, and computer program product for playing back content

This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300&#xb0; C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300&#xb0; C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350&#xb0; C. and a maximum temperature is 1350&#xb0; C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 &#x212b; or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-&#x3bc;m square area of 4 &#x212b; rms or less.

Method for manufacturing SIMOX wafer and SIMOX wafer

This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

Apparatus for manufacturing semiconductor substrates

A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form an amorphous layer; and heat-treating the silicon wafer to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Alternatively, the method for manufacturing a SIMOX wafer includes: in the formation of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300&#xb0; C. or more; and in the formation of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300&#xb0; C.

A liquid crystal display device including a liquid crystal layer, an alignment layer orientating the liquid crystal layer, and a driving circuit that drives the liquid crystal layer. The alignment layer is divided into a plurality of specified regions, each having a recognizable size. The orientation direction of adjacent regions is different from one another. This makes it difficult to resolve a displayed image from directions other than that from the front of the display, and instead a fixed pattern is seen when the display is viewed from directions other than that from the front. This fixed pattern can be chosen as desired and can be, e.g., a figure or a trade name of a product.

Liquid crystal display device

A data copy control method is applied to a computer system that has a reproducing device which receives reproducing data read out by a drive device. A shared key is produced in the drive device and the reproducing device. The reproducing data in the drive device is enciphered using copy control data read out by the drive device and the shared key. The enciphered reproducing data and the copy control data are transferred to the reproducing device. The enciphered reproducing data is deciphered using the copy control data received by the drive device and the shared key.

Method and apparatus to control copying from a drive device to a data reproducing device

An MPEG board issues the key data generated by the board to a DVD drive . The DVD drive generates enciphering key data on the basis of the key data, enciphers the provided data read from a DVD on the basis of the key data, and sends it to the MPEG board . The MPEG board deciphers the enciphered provided data using the key data generated by the board.

Method and an apparatus to control copying from a data providing device to a data receiving device

Growing community of inventors

Tokyo, Japan

Seiichi Nakamura