Mitsubishi Denki Kabushiki Kaisha

Seiichi Nagai

Mitsuo Ishii

Kazuyoshi Hasegawa

Yasuya Kajiwara

Hiroyasu Hagino

Yoshikazu Tanaka

Toshio Tanaka

Isao Oshima

Yousuke Yamamoto

Masayuki Kubota

An optical semiconductor device used for optical information processing, such as writing information into and reading information from an optical disk. The optical semiconductor device includes a Si substrate, a light emitting element, and a reflector for reflecting light emitted from the light emitting element in a direction perpendicular to the mounting surface of the Si substrate. The reflector has a reflecting surface inclined by 45.degree. from a bottom face and formed by etching a single crystal of Si.

Integrated semiconductor light generating and detecting device

A semiconductor light-emitting device which provides optically undistorted light includes a semiconductor light-emitting element and at least one optical element. The light emitting-element and the optical element are held in a resin which is transparent to light emitted from the light-emitting element so that light emitted from the light-emitting element travels to the optical element along an optical path entirely within the resin, but the light exits a portion of the optical element located outside of the resin.

Semiconductor light-emitting device with partial encapsulation

A semiconductor laser device and method of producing the same in which a laser diode chip is mounted on a stem via a heat sink. The cap is fixed to the stem covering the chip and includes a penetrating aperture, a lens for collimating light from the chip into penetrating aperture, and an optical fiber for guiding the collimated light which is fixed to the penetrating aperture after insertion to a desired depth.

Semiconductor laser device and a method of producing same

A submount for a semiconductor laser element includes a substrate and a barrier layer disposed on opposed surfaces of the substrate and including a plurality of layers wherein the outermost layer of the barrier layers is Au and Ag. A metal alloy solder layer comprising Sn, Ag, and Sb is deposited on the barrier layers.

Submount for semiconductor laser element

A polycrystalline silicon film is disposed on the face of an N type silicon substrate including a termination of a PN junction to extend slightly beyond the termination of the PN junction from the periphery of the substrate. In the most preferred embodiment, the polycrystalline silicon film terminates short of both the termination of the PN junction and the periphery of the substrate and is enclosed with silicon dioxide, the silicon dioxide being also disposed at the termination of the PN junction and on the adjacent portions of the main substrate face on its both side as well as on the periphery of the main face.

Semiconductor device

A silicon dioxide film and a silicon nitride film are successively vapor-deposited on a main face of an N type silicon substrate processed with H.sub.2 O.sub.2 water. Those portions of both films underlaid by a P type region to be subsequently formed and their peripheral portions are selectively removed. Then a P type impurity is diffused into the central exposed portion of the main substrate face to form the P type region with a PN junction having a termination facing the silicon dioxide film. Also a silicon dioxide film is thermally formed on the peripheral exposed portion of the main face.

Growing community of inventors

Itami, Japan

Seiichi Nagai