Hitachi, Ltd.

Seiichi Iwata

Naoki Yamamoto

Nobuyoshi Kobayashi

Hiroshi Yamamoto

Atsushi Hiraiwa

Satoru Ito

Shigeru Takahashi

Kiichiro Mukai

Seiki Harada

Hitoshi Matsuo

Akitoshi Ishizaka

Katsuhisa Usami

Shin-ichi Muramatsu

Takeo Yoshimi

Teiichi Homma

Nobuo Hara

A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.

Semiconductor device having electrodes and or interconnections of

A silicon wafer having a tungsten and/or molybdenum film formed on its surface is heat-treated in hydrogen containing water vapor. Thus, silicon can be selectively oxidized without substantially oxidizing tungsten and/or molybdenum.

Method of producing semiconductor device

A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

Semiconductor device with high density low temperature deposited Si.sub.w

A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.

Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes

Growing community of inventors

Sayama, Japan

Seiichi Iwata