Nec Corporation

Nippon Telegraph and Telephone Corporation

Seiichi Itabashi

Junichi Fujikata

Keishi Ohashi

Jun Ushida

Daisuke Okamoto

Kenichi Nishi

Tai Tsuchizawa

In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)&#x3bb; to &#x3bb; [&#x3bb;: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than &#x3bb;/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Waveguide path coupling-type photodiode

Growing community of inventors

Kanagawa, Japan

Seiichi Itabashi