Hitachi, Ltd.

Clean Venture 21 Corporation

Seiichi Isomae

Hidetsugu Ishida

Shuji Ikeda

Shigeru Matsui

Satoshi Meguro

Yoshio Sakai

Kazuo Takeda

Makoto Ohkura

Toshiaki Masuhara

Muneo Maeshima

Yoichi Tamaki

Terunori Warabisako

Masaaki Aoki

Shoji Hanamura

Yukio Yamaguchi

Hirofumi Shimizu

Masahiko Ogirima

Akira Shintani

Yasushi Matsuda

Michiyoshi Maki

Kyoko Minowa

Kenji Kato

Masaki Miyazaki

A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, SiN, TiB, ZrB, zirconia and stabilized zirconia at least near the nozzle. Alternatively, the crucible comprises quartz glass at least near the nozzle and has a heat-resistant support member for suppressing deformation caused by a decrease in viscosity of the quartz glass at high temperatures.

Method and apparatus for producing semiconductor or metal particles

Semiconductor device having buried boron and carbon regions, and method of manufacture thereof

A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.

Defect assessing apparatus and method, and semiconductor manufacturing method

Semiconductor device having buried boron and carbon regions

A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.

Recrystallized CMOS with different crystal planes

A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.

Germanium-containing silicon nitride film

Growing community of inventors

Hanno, Japan

Seiichi Isomae