Kabushiki Kaisha Toshiba

Seiichi Hirata

Kazutaka Takagi

Toshiharu Sakurai

Akito Yoshida

Kenji Takahashi

Chiaki Takubo

Shinetsu Fujieda

Yasuhiro Yamaji

Akio Katsumata

Shinjiro Kojima

Hiroshi Shimozawa

Kimihiro Ikebe

Masafumi Takeuchi

Sumio Takeda

In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excellent electric property is obtained.

Manufacturing method for making a microwave semiconductor device with improved heat discharge and electric properties

Microwave semiconductor device with improved heat discharge and electrical properties and manufacturing method thereof

Two device holes are formed in a base film such that the device holes are juxtaposed in a width direction of the base film perpendicular to a feed direction of the base film. An outer lead hole is formed in the base film with a distance from the device holes in the feed direction. A first lead wire group is arranged on the base film between the outer lead hole and one of the device holes, and a second lead wire group is arranged on the base film between the outer lead hole and the other device hole. Further, a third lead wire group is arranged on the base film between both device holes.

Lead carrier

According to this invention, there is provided a semiconductor device including a TAB tape having through hole for an element, a plurality of leads integrally formed on the TAB tape, a semiconductor element connected to one end of each of the leads through a bump formed in the through hole for the element, a plurality of lead frames each connected to the other end of a corresponding one of the leads, and a mold resin sealed to cover the most part of the TAB tape, the leads, the semiconductor element, and the lead frames, wherein connection portions between the leads and the lead frames are linearly formed at equal pitches perpendicularly to an outer periphery of the semiconductor element opposite to the connection portions. Each of portions near positions where the leads are respectively connected to the lead frames is formed in a gull-wing shape. The straight end portions of the lead frames extend from ends of the lead frames to flexing points of the lead frames, and the lengths of the straight end portions are set at least 0.3 mm or more. In the mold resin, the thickness of a resin positioned at the upper portion of the semiconductor element is set to be smaller than that of a resin positioned at the lower portion of the semiconductor element.

Semiconductor device

An insulating film is formed on a semiconductor substrate, and an Al electrode pad is provided on the insulating film. The pad is electrically connected to a positive element by means of a signal line. A protection film is formed on the pad and insulating film. First and second openings are formed in the protection film. A barrier metal layer is formed on the inner periphery of the first opening and on the protection film. An Au bump is formed on the barrier metal layer. The Al electrode pad is exposed through the second opening.

Semiconductor device having an opening and method of manufacturing the

A plastic molded semiconductor device having a semiconductor chip mounted on a die pad supported by hanging pins. The semiconductor chip is encapsulated by mold plastic where the semiconductor chip has a lead portion protruding to a side, and in which practically the entire periphery of the semiconductor chip is covered by aluminum or some other moistureproof material that stops the entry of moisture.

Plastic molded semiconductor device having waterproof cap

This invention provides a semiconductor device comprising a die-pad supported by tie-bars, a semiconductor element mounted on the die-pad with the die-pad, tie-bars and semiconductor element being encapsulated in a moulding compound, means for defining an aperture which extends in to the moulding compound so as to expose a portion of a tie-bar.

Slits are formed in the metal wiring layer formed on the semiconductor of a semiconductor device to be resin sealed thereby to divide the total width of the metal wiring layer into divided widths each of the order of 30 to 40 .mu.m, whereby stress generated in the metal wiring layer is absorbed and prevented from causing cracking, deformation, and other defects. The slits are arranged to be substantially parallel to the peripheral side of the device which is most closely located to the wiring part.

Growing community of inventors

Yokosuka, Japan

Seiichi Hirata