Tdk Corporation

Renesas Technology Corp.

Seiichi Endo

Keiichi Morimoto

Takashi Tanaka

Motoharu Ishii

Satoshi Tanaka

Hideki Sasaki

Makoto Iwasaki

Kazuo Katai

Yousuke Miyaki

Fumitaka Baba

Takahide Kurahashi

Masayuki Ohtsuka

Hitoshi Maro

Yuji Iwashita

Kazunori Oi

Kazuyuki Satou

Norihisa Saito

Tsuneki Watanabe

In the rare earth sintered magnet, the ratio of R2 to the sum of R1 and R2 that are contained in crystal grain boundaries surrounding the crystal grains in the rare earth sintered magnet body is higher than the ratio of R2 to the sum of R1 and R2 in the crystal grains, and the concentration of R2 increases from the central portion of the rare earth sintered magnet body toward the surface of the rare earth sintered magnet body. In addition, the degree of unevenness in residual magnetic flux density on the surface of the rare earth sintered magnet body is smaller than 3.0%.

Rare earth sintered magnet and motor

Distance &#x3bb;m between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance &#x3bb; determined based on a minimum design dimension between a control gate and a contact of a peripheral transistor. Data retention characteristics of a programmable memory which stores data in accordance with the amount of accumulated charges in the floating gate can be ensured without being affecting by mask misalignment or the like.

Programmable nonvolatile memory and semiconductor integrated circuit device

In a nonvolatile memory cell, a selection transistor is connected to a memory cell transistor in series. The selection transistor is formed into a double layer gate structure, and has a voltage of each gate driven individually and separately. Using capacitive coupling between these stacked gate electrode layers of the selection transistor, a gate potential of the selection transistor is set to the predetermined voltage level. An absolute value of the voltage level generated by a voltage generator to the gates of the selection transistor can be made small, so that current consumption can be reduced and an layout area of the voltage generator can be reduced. Thus, a nonvolatile semiconductor memory device with a low current consumption and a small chip layout area is provided.

Nonvolatile semiconductor memory device

A process for production of a magnet which comprises step of supplying a slurry S containing magnetic powder and a dispersing medium into the cavity C of a molding apparatusa step of compression molding the slurry S while applying a magnetic field to the slurry S to obtain a molded article and a step of sintering the molded article to obtain a magnet, wherein the molding apparatuscomprises a diehaving a through-holeinto which the slurry S is supplied, a slurry supply gatebeing formed in the inner wall surfacea dieinserted in the through-holeand a diethat forms a cavity C together with the diesthe slurry S being supplied in an amount such that it is less than the volume of the cavity C when the diehas been inserted in the through-holeand has blocked the slurry supply gateand in the step of obtaining the molded article, the slurry S is compression molded after the diehas blocked the slurry supply gate

Process for production of magnet, magnet obtained thereby and production apparatus for molded articles for magnet

An electrode production method has an active-material-containing layer forming step of applying an electrode-forming coating solution containing an electrode active material, a binder capable of binding the electrode active material, and a liquid capable of dissolving or dispersing the binder, onto a collector sheet, and thereafter removing the liquid to form an active-material-containing layer on the collector, thereby obtaining a electrode sheet; and an electrode forming step of cutting the electrode sheet with a slitter apparatus to obtain an electrode.

Slitter apparatus and production method of electrode

The method is related to intermittent coating capable of distinctly defining a boundary between a coated region and an uncoated region on a web, to thereby intermittently form a coated film on the web with increased accuracy and efficiency. A coating liquid feed pump is arranged so as to alternately communicate with a circulation line and a pocket of an extrusion type coater through a directional control valve, resulting in coating liquid being intermittently fed to the pocket and then forced out of a slit, so that coated regions and uncoated regions may be alternately formed on a conductive sheet material. During interruption of communication between the pocket and the feed pump, the pocket is permitted to communicate via a discharge pipe and a shut-off valve with a sub-tank to reduce a pressure of coating liquid in the pocket, to thereby prevent undesired feeding of coating liquid to the uncoated region beyond an end position of the coated region.

Intermittent coating method and apparatus therefor

Growing community of inventors

Tokyo, Japan

Seiichi Endo