Hitachi Automotive Systems, Ltd.

Other

Hitachi, Ltd.

Seigo Yukutake

Hideki Miyazaki

Katsuhiro Hoshino

Toshisada Mitsui

Atsuo Watanabe

Yasuyuki Kojima

Mitsuaki Horiuchi

Minehiro Nemoto

Koichi Yahata

Yusuke Takeuchi

Yoshio Akaishi

Yoshiaki Yuyama

Koki Sakai

Shinichi Tanabe

Takayuki Iwasakii

In a case where a switching element of an inverter does not operate properly due to failure or the like, a three-phase short circuit cannot be made, and an induced voltage cannot be suppressed. An induced voltage suppression device is electrically connected to the three-phase wiring between the power converter and the motor, in parallel to the power converter. A rectification circuit including a three-phase diode bridge circuit. A DC voltage source including a capacitor. A voltage detection circuit detects a voltage of both ends of the DC voltage source. In a short circuit, when a transistor of the voltage detection circuit is turned on, transistors are turned on to perform three-phase short-circuit operation to suppress an induced voltage of the motor. Since the induced voltage suppression device secures a DC voltage by the induced voltage of the motor as a drive source in a self-excited manner, it is possible to suppress the induced voltage even when an abnormality occurs in the power converter.

Induced voltage suppression device, motor system, and power conversion system

Provided is a motor drive device capable of adjusting a 0-axis current to a desired value. A motor drive device (inverter device) for an open winding type motorin which a stator winding wire includes three-phase independent winding wires, andincludes a plurality of single-phase inverters, andprovided for each of the winding wirestoto individually apply a voltage to a corresponding winding wire, and a controllerthat controls each of the single-phase invertersto. The controlleradjusts a 0-axis current to a predetermined value by alternately and repeatedly generating a first period in which a sum of voltages applied to the respective independent winding wirestois set to a value other than zero to offset the 0-axis current and a second period in which the sum of the voltages applied to the respective winding wirestois set to zero.

Motor drive device

A motor drive control device is a device which drives and controls a permanent magnet synchronous motor in which each phase is independently controlled, and includes a 0-axis current calculation unit which calculates and outputs a 0-axis current ion the basis of a motor current; a 0-axis current determination unit which compares and determines a reference 0-axis current value i, which is the 0-axis current value when the temperature of a permanent magnet provided in the permanent magnet synchronous motor is a reference temperature with the calculated 0-axis current i; and a switching signal generation unit which drives and controls inverters on the basis of the result of comparison determination of the 0-axis current determination unit.

Motor drive control device

A power converter unit comprises: a metal casing; a power module mounted in the metal casing and equipped with two or more power semiconductor devices; a metal plate disposed on the power module and fixed to the metal casing; a heat dissipating sheet disposed on the metal plate; and a drive circuit board disposed on the heat dissipating sheet and is equipped with a control circuit for controlling the power semiconductor devices.

Power converter unit

A circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. Furthermore, a circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. As a result, distribution of voltage applied between the circuit regions and by the wiring resistors or the diffused resistors to can increase the withstand voltage of a semiconductor integrated circuit.

Semiconductor integrated circuit device and manufacturing method thereof

Growing community of inventors

Hitachinaka, Japan

Seigo Yukutake