Fujifilm Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

The University of Tokyo

Japan Breast Cancer Research Group

Seigo Nakamura

Yuichiro Itai

Kenichi Umeda

Yasuhiro Motoyama

Yoshihisa Usami

Shinichiro Sonoda

Akio Hasebe

Yasunori Narizuka

Tatsuya Yoshihiro

Yoshiki Maehara

Junichi Takeya

Kenji Kawakami

Iwao Natori

Hideki Yasuda

Atsushi Mukai

Masakazu Toi

Hitoshi Tsuda

Yoshihiko Mochizuki

Futoshi Akiyama

Hiroji Iwata

Katsumasa Kuroi

Shinji Ohno

Norikazu Masuda

Kenjiro Aogi

Nobuaki Sato

Masafumi Kurosumi

Yoshimi Horigome

The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

Optical thin film having metal layer containing silver and high standard electrode potential metal

An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

Antireflection film, optical element, and optical system

In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3&#xd7;10J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.

Laminated film and method for producing laminated film

Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

Antireflection film having silver-containing layer and fluorocarbon layer, method for producing antireflection film, optical element, and optical system

An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

Antireflection film, optical element, optical system, method of producing antireflection film

This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50&#xb0; C. or higher and 400&#xb0; C. or lower.

Method for producing transparent optical film and method for producing transparent multilayer film

An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.

Optical thin film, optical element, optical system, and method for producing optical thin film

Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

Method of manufacturing film using alignment material

A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.

Manufacturing device of organic semiconductor film

A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 &#x3bc;m or less.

Method of manufacturing organic semiconductor film

A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression 'O Proportion: (Number of O/Total Number of Si, N, and O)&#xd7;100%' increases in a direction from the uniform region side to an interface and in which a variation of the O proportion per unit thickness is 2%/nm to 8%/nm.

Gas barrier film and method of manufacturing gas barrier film

An administration method comprising: determining a cancer type through (i) first data indicating that an Estrogen Receptor (ER) is negative and a Human Epidermal growth factor Receptor-2 (Her2) is negative, or (ii) second data indicating that at least one of the ER and the Her2 is positive; and when the cancer type is determined through (i) the first data indicating that the ER is negative and the Her2 is negative: first performing a docetaxel administration cycle comprising administrating docetaxel to a patient multiple times at certain intervals; and then performing a 5-fluorouracil, epirubicin, and cyclophosphamide (FEC) administration cycle comprising administrating 5-fluorouracil, epirubicin, and cyclophosphamide to the patient multiple times at certain intervals, and when the cancer type is determined through (ii) the second data indicating that at least one of the ER and Her2 is positive: first performing the FEC administration cycle; and then performing the docetaxel administration cycle.

Method for the administration of anti-cancer drugs

The variation in the contact pressures of the plurality of contact terminals to the plurality of chip electrodes is decreased. A thin-film sheet (first sheet) includes: a principal surface (contact-terminal formation surface) on which a plurality of contactors (contact terminals) are formed; and a rear surface positioned on an opposite side to the principal surface. Also, in the thin film sheet, a plurality of wirings and dummy wiring are arranged between the principal surface and the rear surface. A slit formed of an opening portion penetrating from the principal surface of the thin-film sheet to the rear surface thereof is formed along the wiring between the dummy wiring and the contactor arranged at an end of a contactor group (first contact terminal group) in which the plurality of contactors are aligned.

Method of manufacturing semiconductor integrated circuit device

A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

Growing community of inventors

Kanagawa, Japan

Seigo Nakamura