C.uyemura Co., Ltd.

Denso Corporation

Seigo Kurosaka

Yukinori Oda

Masayuki Kiso

Akira Okada

Kazuhiko Sugiura

Yoshikazu Saijo

Katsuhisa Tanabe

Tohru Kamitamari

Tomohito Iwashige

Hiromu Inagawa

Kazuhiro Miwa

Yuichi Sakuma

Ayumi Okubo

Akihiko Murasumi

A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

Semiconductor device

Part or whole of an electroless gold plating film of a plated film laminate including an electroless nickel plating film, an electroless palladium plating film and an electroless gold plating film is formed by an electroless gold plating using an electroless gold plating bath including a water-soluble gold compound, a complexing agent, formaldehyde and/or a formaldehyde-bisulfite adduct, and an amine compound represented by the following general formula R&#x2014;NH&#x2014;CH&#x2014;NH&#x2014;Ror R&#x2014;(CH&#x2014;NH&#x2014;CH&#x2014;NH&#x2014;CH)&#x2014;R. The method of the invention does not need two types of baths, a flash gold plating bath and a thick gold plating bath for thickening. Gold plating films of different thicknesses suited for solder bonding or wire bonding can be formed using only one type of gold plating bath.

Electroless gold plating method and electronic parts

An electroless gold plating bath includes a water-soluble gold compound, a complexing agent, a formaldehyde metabisulfite adduct, and an amine compound represented by R&#x2014;NH&#x2014;CH&#x2014;NH&#x2014;Ror (CH&#x2014;NH&#x2014;CH&#x2014;NH&#x2014;CH)(wherein Rto Rrepresent &#x2014;OH, &#x2014;CH, &#x2014;CHOH, &#x2014;CHOH, &#x2014;CHN(CH), &#x2014;CHNH(CHOH), &#x2014;CHNH(CHOH), &#x2014;CHNH(CHOH), &#x2014;CHNH(CHOH), &#x2014;CHN(CHOH), &#x2014;CHN(CHOH), &#x2014;CHN(CHOH)or &#x2014;CHN(CHOH), and n is an integer of 1 to 4). A gold plated coating of a good appearance can be formed without causing a failure in appearance owing to the progress of intergranular corrosion in a nickel surface.

Electroless gold plating bath, electroless gold plating method and electronic parts

Disclosed is an electroless palladium plating bath containing a palladium compound, at least one complexing agent selected from ammonia and amine compounds, at least one reducing agent selected from phosphinic acid and phosphinates, and at least one unsaturated carboxylic acid compound selected from unsaturated carboxylic acids, unsaturated carboxylic acid anhydrides, unsaturated carboxylates and unsaturated carboxylic acid derivatives. Such an electroless palladium plating bath has high bath stability, and decomposition of the bath hardly occurs. Consequently, the electroless palladium plating bath of the present invention has a longer bath life than conventional electroless palladium plating baths. In addition, this electroless palladium plating bath enables to obtain excellent solder bonding characteristics and wire bonding characteristics since it does not affect plating film characteristics even when it is used for a long time.

Electroless palladium plating bath and electroless palladium plating method

Growing community of inventors

Hirakata, Japan

Seigo Kurosaka