Rogers Inoac Corporation

Inoac Corporation

Seigo Hishiki

A single-layered polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafers, etc., which attains excellent step height reduction and in-plane uniformity and is integrally molded by reaction injection molding, is provided. The polishing pad is a polyurethane-based foamhaving a desired shape, as obtained by molding a gas-dissolved raw material having an inert gas dissolved under pressure in a polyurethane-base resin raw material by a reaction injection molding method, and includes a polishing regionhaving a polishing surfacesuitable for polishing semi-conductor materials, etc. and having a Shore D hardness in the range of from 40 to 80 and a stress reduction regionwhich is present in the side opposing to the polishing surfaceand which, when provided with a stress adjusting portionof a desired pattern, is set up so as to have an amount of deflection, as applied with a load of 0.05 MPa, of 10 &#x3bc;m or more.

Polishing pad

A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foamhaving fine and uniform cellssuitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

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Nagoya, Japan

Seigo Hishiki