Tokyo Electron Limited

Seigo Fujitsu

Hideaki Sato

Hisashi Kawano

Takao Inada

Hiroshi Yoshida

Takafumi Tsuchiya

Toshiyuki Shiokawa

Hiroyuki Masutomi

Jian Zhang

Teruaki Konishi

Koji Ogura

Yuki Ishii

A substrate liquid processing apparatus Aincludes a processing tubaccommodating a processing liquidand a substrate; a gas nozzledischarging a gas into a lower portion within the processing tub; a gas supply unitsupplying the gas; a gas supply lineconnecting the gas nozzlewith the gas supply unit; a decompression unitintroducing the processing liquidwithin the processing tubinto the gas supply lineby decompressing the gas supply line; and a control unitperforming a first control of controlling the gas supply unitto stop supply of the gas and controlling the decompression unitto introduce the processing liquidinto the gas supply linein a part of an idle period during which the substrateis not accommodated in the processing tub

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

Substrate processing apparatus, substrate processing method and recording medium

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Koshi, Japan

Seigo Fujitsu