E.i. Dupont De Nemours and Company

Harvard College

North Carolina State University

Cda Processing Limited Liability Company

Simon Fraser University

Seigi Suh

Roy Gerald Gordon

William J Borland

Jill Svenja Becker

Dennis Michael Hausmann

Ian Burn

Jon Fredrick Ihlefeld

Jon Paul Maria

Haixin Yang

Jon-Paul Maria

Ross Henry Hill

Esther Kim

Paul J Roman, Jr

Xin Zhang

Timothy R Overcash

Omega N Mack

Christopher Allen Gross

Jill Becker

The invention is directed to a polyimide-based polymer thick film paste composition for forming a polyimide-based polymer thick film resistor, a process for forming the resistor and an electrical device containing a resistor formed using the paste composition The paste composition comprise a functional component, a polyimide, and an organic solvent and can be cured by heating.

Polyimide-based polymer thick film resistor composition

This invention is directed to polyimide-based polymer thick film compositions and particularly non-fluorinated polyimide-based polymer thick film compositions. These compositions are comprised of certain polyimide polymers and certain solvents. In some embodiments various functional components are added to the composition to provide compositions that can be used to form various elements of an electrical circuit.

Polyimide-based polymer thick film compositions

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300&#xb0; C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250&#xb0; C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

The invention is directed to a paste composition and a process for forming a solderable polyimide-based polymer thick film conductor. The paste composition comprising an electrically conductive metal, a polyimide, an organosilicon compound and an organic solvent and can be cured by heating at a temperature of 320 to 380&#xb0; C. The invention also provides an electrical device containing a solderable polyimide-based polymer thick film conductor formed using the paste composition.

Paste and process for forming a solderable polyimide-based polymer thick film conductor

This invention provides a polymer thick film copper conductor composition for forming an electrical conductor and a method for using the polymer thick film copper conductor composition to form an electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Photonic sintering of a polymer thick film copper conductor composition

This invention provides a polymer thick film copper conductor composition for forming a solderable and highly solder leach resistant electrical conductor and a method for using the polymer thick film copper conductor composition to form the electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Photonic sintering of a solderable polymer thick film copper conductor composition

Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650&#xb0; C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200&#xb0; C.

Thin film capacitors on metal foils and methods of manufacturing same

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300&#xb0; C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250&#xb0; C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

Glass flux assisted sintering of chemical solution deposited thin dielectric films

The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.

Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof

Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric

The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Articles comprising manganese doped barium titanate thin film compositions

Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300&#xb0; C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

Growing community of inventors

Cary, NC, United States of America

Seigi Suh