Fujitsu Corporation

Fuji Photo Film Company, Limited

Seigen Otani

Yoshiaki Sakamoto

Tomohisa Shingai

Shuji Koike

Toshihiko Osada

Kazuaki Kurihara

Hideyuki Noshiro

A method of producing an ink-jet recording head using ion milling is provided. The method includes the steps of forming a piezoelectric layer subsequent to an electrode layer on a substrate by using a thin-film deposition technology, forming an energy-generating element for generating energy for ink ejection by etching the electrode layer and the piezoelectric layer simultaneously by ion milling, and removing a fence formed by deposits of mixed fine powders including those etched off the electrode layer and the piezoelectric layer.

Method of producing ink-jet recording head

An ink jet head having a plurality of nozzles discharging ink supplied from an ink supply unit. The ink jet head includes a head main body including a plurality of pressure chambers ( ) provided for the respective nozzles, in which ink is filled, and a plurality of pressure units provided for the respective pressure chambers ( ), each of the pressure units applying pressure to the pressure chamber ( ) to discharge the ink in the pressure chamber ( ) from the nozzle, an individual electrode ( ) provided for each of the pressure units to drive the pressure unit, at least one contact ( ) connected to an external connection wiring member supplying a signal for controlling the pressure unit, and a wiring pattern ( ) formed into a thin film to electrically connect the individual electrode ( ) to the contact ( ), thereby facilitating connection to the external connection wiring member, improving the fabrication efficiency and the reliability.

Ink jet head and printing apparatus

Ink-jet recording head and method of producing the same

A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300.degree. C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250.degree. C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4.times.10.sup.-7 A/cm.sup.2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.

High permittivity ST thin film and a capacitor for a semiconductor

High-permittivity thin film capacitor for a semiconductor integrated

A method of forming a Bi system copper oxide superconducting thin film of Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.x (n.gtoreq.2) including at least the equivalent of a pair of a full CuO molecular layer and a full CaO molecular layer, by a layer-by-layer process (an atomic layer piling process) using MBE. In accordance with the method, the CuO and CaO needed for the film are deposited in a pile by alternately depositing CuO in an amount equal to a 1/m portion of a full CuO molecular layer and CaO in an amount equal to a 1/ m portion of a full CaO molecular layer in a manner similar to that used for superlattice structure formation. The alternate deposition of CuO and CaO layer portions is repeated m times where m is an integral number of not less than n. During the deposition process, the deposition time of each CuO portion is X/m, where X is the depositing formation time of one full CuO molecular layer, and the deposition time of each CaO portion is Y/m, where Y is the depositing formation time of one full CuO molecular layer.

Layer-by-layer process for forming B.sub.i -containing oxide

A method of forming a Bi-Sr-Ca-Cu-O system (Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x) superconducting thin film in which two half-unit cells constitute a Perovskite structure layer, characterized in that Sr and Bi layers, which are present between said half-unit cells, are each deposited without oxidation by using an MBE process or an MO-MBE process with an atomic layer level control capability. A critical current density of the Bi-Sr-Ca-Cu-O system superconducting thin film is not significantly reduced.

MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting thin

A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the substrate, extending between and contacting the electrodes. The superconductor pattern obtained by this method suffers less degradation of the superconductor thin film, in comparison with that of patterns formed by the prior art methods, and the decrease of the critical current density as a function of increasing temperature is extremely small.

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Kawasaki, Japan

Seigen Otani