Samsung Display Co., Ltd.

Kobe Steel, Ltd.

Other

Sei-yong Park

Jang-Il Kim

Sung H Hong

Un Byoll Ko

Jae Woo Park

Jun Hyun Park

Jung Wook Lee

Je Hun Lee

Byung Du Ahn

Sunghee Hong

Gun Hee Kim

Yeo Geon Yoon

Ji Hun Lim

Je-Hun Lee

Toshihiro Kugimiya

Seung Jun Yu

Hyun-Ho Kang

Aya Miki

Kyoung Won Lee

Shinya Morita

Yeo-Geon Yoon

Jun-Hyun Park

Joonggun Chong

Byung-Du Ahn

Tomoya Kishi

Hiroaki Tao

Jae-Woo Park

Sung-Hee Hong

Yongdoo Park

Ki Chul Shin

Sung-Chul Kim

Jin Won Kim

Yeogeon Yoon

Hyeok Jin Lee

Oh Jeong Kwon

Dae-Hwan Kim

Dong-Chul Shin

Jung Hwa Kim

Hiroshi Goto

Sang-Myoung Lee

O Sung Seo

Ki Kyung Youk

Yong-Woo Jeon

Jin-Hyun Park

Ha Won Yu

Hyoung Cheol Lee

Osung Seo

Hyung Gi Jung

Yeon Hong Kim

Jin Seong Park

Jee-Hun Lim

Gun-Hee Kim

Seung Ho Yeon

Mi-Hyae Park

Bu Sop Song

Tae Gweon Lee

Se Jin Kim

Jin Hyun Park

Woo-Ho Jeong

A liquid crystal display panel includes a first odd source electrode and a first odd drain electrode on a first odd semiconductor layer have the same shapes as a first even drain electrode and a first even source electrode on a first even semiconductor layer, and when viewed in a plan view, a shape of a even pixel, except for a first even transistor, has substantially inversion symmetry with a shape of a odd pixel about a point on a virtual line parallel to a second direction.

Liquid crystal display panel

A curved display device including a first substrate, a thin film transistor (TFT) disposed on the first substrate, a pixel electrode connected to the TFT, a second substrate overlapping the first substrate, a liquid crystal layer disposed between the first and the second substrates, and a common electrode disposed between the second substrate and the liquid crystal layer, in which the pixel electrode includes a cross-shaped stem portion having a horizontal stem portion, a vertical stem portion, and a plurality of fine branches extending from the cross-shaped stem portion, at least one of the fine branches includes a first portion and a second portion having a width greater than that of the first portion, and an extending line from a boundary between the first portion and the second portion is sloped at an angle in a range of &#x2212;10 degrees to +10 degrees with respect to the vertical stem portion.

Curved display device

A display device may include a floating electrode, a common-voltage electrode, a transistor, and a pixel electrode. The floating electrode may be electrically floating. The common-voltage electrode may be electrically connected to a voltage source. The pixel electrode may be electrically connected to the transistor. A first portion of the pixel electrode may overlap neither of the floating electrode and the common-voltage electrode in a direction perpendicular to at least one of the pixel electrode and an image display side of the display device. A second portion of the pixel electrode may overlap the common-voltage electrode. A third portion of the pixel electrode may overlap the floating electrode.

Display device

A display panel includes a first substrate, a first thin film transistor disposed on the first substrate, a color filter disposed on the first thin film transistor, a passivation layer disposed on the color filter, a first opening being formed through the passivation layer and extending into the color filter, and a first pixel electrode disposed on the passivation layer, electrically connected to the first thin film transistor, and overlapping the first opening.

Display panel and method of manufacturing the same

A liquid crystal display according to an exemplary embodiment of the present inventive concept includes: a first insulating substrate; a gate line and a data line, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a second insulating substrate facing the first insulating substrate, wherein one pixel includes the thin film transistor and the pixel electrode and includes a first sub-region and a second sub-region which are separated by the gate line intervened therebetween, the high gradation sub-pixel electrode includes a first high gradation sub-pixel electrode disposed in the first sub-region, and a second high gradation sub-pixel electrode disposed in the second sub-region, and the low gradation sub-pixel electrode includes a first low gradation sub-pixel electrode disposed in the first sub-region, and a second low gradation sub-pixel electrode disposed in the second sub-region.

Liquid crystal display

There is provided a curved display device including a first substrate, a thin film transistor (TFT) disposed on the first substrate, a pixel electrode connected to the TFT, a second substrate facing the first substrate, a common electrode positioned on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate, wherein the pixel electrode includes a cross-shaped stem portion including a horizontal stem portion and a vertical stem portion intersecting the horizontal stem portion and a plurality of fine branches extending from the cross-shaped stem portion, each of the fine branches includes a first portion and a second portion having a width greater than that of the first portion, and the first portion is connected to the cross-shaped stem portion.

A display panel curved in a first direction includes: first and second areas corresponding to two segments of a pixel divided by a line in a second direction perpendicular to the first direction; and a first electrode, in which first sub horizontal openings are defined in the first area, and second sub horizontal openings are defined in the second area, where the first and second sub horizontal openings extend along the first direction; a second substrate including: third and fourth areas corresponding to two segments of the pixel divided by a line in the first direction; and a second electrode, in which first vertical openings are defined in the third area, and second vertical openings are defined in the fourth area, where the first and second vertical openings extend along the second direction; and a liquid crystal layer between the first and second substrates.

A liquid crystal display includes: a first substrate; a gate line on the first substrate; a first switching element connected to the gate line, to which a data voltage is applied; a first pixel electrode connected to the first switching element; and a color filter between the first switching element and the first pixel electrode, in which is defined: two contact holes spaced apart from each other, and a connecting portion connecting the spaced apart two contact holes to each other. The first pixel electrode is connected to the first switching element via a first contact hole among the spaced apart two contact holes.

Liquid crystal display and method of manufacturing the same

A display device includes a transistor, a data line, a pixel electrode, a common electrode, and a liquid crystal layer. The data line is connected to a source electrode of the transistor. A geometric radius of curvature associated with the display device is perpendicular to the data line. The pixel electrode is connected to a drain electrode of the transistor and includes a plate electrode. Sides of the plate electrode are oriented at acute angles with respect to the data line in a plan view associated with the display device. The common electrode overlaps the pixel electrode and has a slit. The slit has a first edge and a second edge. The first edge is perpendicular to the data line in the plan view and is longer than the second edge. The liquid crystal layer is positioned between the pixel electrode and the common electrode.

Curved liquid crystal display device

A display apparatus includes a plurality of gate lines extending in a first direction, a plurality of data lines extending in a second direction intersecting the first direction, a plurality of auxiliary gate lines extending in the second direction, a plurality of auxiliary data lines extending in the first direction, a display panel including first pixels and second pixels, and a driving part controlling the display panel to display an image. The first pixels are connected to the plurality of gate lines and the plurality of data lines, respectively. The second pixels are connected to the plurality of auxiliary gate lines and the plurality of auxiliary data lines, respectively. The auxiliary gate lines correspond to the gate lines, respectively. Each of the auxiliary gate lines is electrically connected to the corresponding one of the gate lines.

Display panel and display apparatus including the same

An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same

A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gusing a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gand values of an interface state-density-function Dover the entire energy band in the band gap.

Method for calculating parameter values of thin-film transistor and apparatus for performing the method

A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 10per cubic centimeter to about 10per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Thin film transistor substrate and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Sei-yong Park