Lg Electronics Inc.

Sehwon Ahn

Kwangsun Ji

Heonmin Lee

Youngjoo Eo

Junghoon Choi

Sunho Kim

Seungyoon Lee

Jeonghun Son

Dongjoo You

Suntae Hwang

Taeho Moon

Seungjoon Lee

Soohyun Kim

Hyun Sup Lee

Jinhee Park

Wooyoung Kim

Yujin Lee

Wonki Yoon

Kangseok Moon

Hongcheol Lee

Jinwon Chung

Kwangyoung Lim

Seungjik Lee

Seyoun Moon

Hyunja Shim

A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.

Solar cell and manufacturing method thereof

A solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode on the first semiconductor region, a second electrode on the back surface of the semiconductor substrate, and a second semiconductor region positioned between the semiconductor substrate and the second electrode and doped with impurities of a second conductive type opposite the first conductive type, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

Solar cell and method of manufacturing the same

Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode connected to the first semiconductor region, and a second electrode connected to the back surface of the semiconductor substrate. The second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

A solar cell module and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell module includes applying a low melting point metal on an electrode included in each of a plurality of solar cells, melting the low melting point metal to form a contact layer on the electrode, generating an ultrasonic vibration in the contact layer to remove a surface oxide layer formed on a surface of the electrode, melting a surface metal of the electrode and the contact layer to form a metal connection layer on the surface of the electrode, and connecting the metal connection layer to an interconnector.

Solar cell module and method for manufacturing the same

Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, at least one emitter layer on the substrate, at least one first electrode electrically connected to the at least one emitter layer, and at least one second electrode electrically connected to the substrate. At least one of the first electrode and the second electrode is formed using a plating method.

A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cmwith respect to light having a wavelength equal to or greater than 700 nm.

Silicon thin film solar cell

A solar cell module and a method for manufacturing the same are discussed. The solar cell module includes a substrate including an electricity generation area and an edge area that are divided by an insulating area, and a plurality of solar cells positioned in the electricity generation area. Each of the solar cells includes a transparent electrode on the substrate, a silicon electricity generation layer on the transparent electrode, and a back electrode on the silicon electricity generation layer. The back electrode of one solar cell is electrically connected to the transparent electrode of another solar cell adjacent to the one solar cell. A side of a transparent electrode of an outermost solar cell adjacent to the insulating area is covered by a side portion of a silicon electricity generation layer of the outermost solar cell exposed in the insulating area.

A method for manufacturing a thin film solar cell includes depositing a front electrode on a substrate in a chamber, etching the front electrode formed on the substrate to form an uneven portion on the surface of the front electrode, forming a photoelectric conversion unit on the front electrode, and forming a back electrode on the photoelectric conversion unit. The depositing of the front electrode includes depositing the front electrode while reducing a process pressure of the chamber from a first pressure to a second pressure lower than the first pressure. The etching of the front electrode form the uneven portion of the front electrode so that a top portion of the uneven portion includes a portion formed at the second pressure.

Method for manufacturing thin film solar cell

A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.

Plasma deposition of a thin film

A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon.

Thin film solar cell

A thin film solar cell module is disclosed. The thin film solar cell module includes a substrate and a plurality of cells each including a first electrode positioned on the substrate, a second electrode positioned on the first electrode, and a photoelectric transformation layer positioned between the first electrode and the second electrode. The plurality of cells are divided into a first group and a second group. A plurality of cells included in the first group are electrically connected in series to one another, and a plurality of cells included in the second group are electrically connected in series to one another. The first group and the second group are connected in parallel to each other using a lead wire. The lead wire is positioned on both the first group and the second group.

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Seoul, South Korea

Sehwon Ahn