Lg Display Co., Ltd.

SeHee Park

PilSang Yun

Jaeyoon Park

JungSeok Seo

Jiyong Noh

InTak Cho

Jeyong Jeon

ChanYong Jeong

DaeHwan Kim

Kwanghwan Ji

HyungJoon Koo

HongRak Choi

SangYun Sung

JuHeyuck Baeck

Jaeman Jang

Intak Cho

Jungseok Seo

A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

Thin-film transistor and display device including the same

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

Electronic device

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

Thin-film transistor, display device including the same, and method of manufacturing the same

A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.

Transistor having vertical structure and electric device

A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

Display device comprising thin film transistors and method for manufacturing the same

A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

Display apparatus comprising different types of thin film transistors and method for manufacturing the same

A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

Thin film transistor substrate, shift register and display device

An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

Transistor and electronic device

An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

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Paju-si, South Korea

SeHee Park