Samsung Electronics Co., Ltd.

Segab Kwon

Dongho Ahn

Chungman Kim

Seunggeun Yu

Wonjun Lee

Jinwoo Lee

Changseung Lee

Kwangmin Park

Zhe Wu

Kiyeon Yang

Bonwon Koo

Yongyoung Park

Hajun Sung

Hyoshin Ahn

Jabin Lee

Inkook Jang

Daesin Kim

A memory device includes a plurality of first conductive lines on a substrate and extending in a first direction, a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction, and a plurality of memory cells respectively between the plurality of first conductive lines and the plurality of second conductive lines. Each of the plurality of memory cells includes a switching element and a variable resistance material layer. The switching element includes a material having a composition of [GePSe][O], where 0.15≤X≤0.50, 0.15≤Y≤0.50, 0.35≤Z≤0.70, and 0.01≤W≤0.10.

Memory devices

Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

Chalcogen compound and semiconductor device including the same

A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

Semiconductor device

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Seoul, South Korea

Segab Kwon