Samsung Electronics Co., Ltd.

Seeyub Yang

Jongwoo Sun

Hyungjoo Lee

Jeongil Mun

Kyeonghun Kim

Yongseok Lee

Eunhee Jeang

Taekyoon Park

Kyoungsuk Kim

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same

An etching apparatus includes a reaction chamber having an internal space, a fixing chuck disposed in the reaction chamber, an electrostatic chuck disposed on the fixing chuck and on which a wafer is placed, a focus ring surrounding the electrostatic chuck, and a sensor device configured to be transferred into or out of the reaction chamber and placed on the electrostatic chuck. The sensor device includes a body having a plate shape, and a sensor disposed on an upper surface of the body which senses whether the focus ring is worn.

Sensor device and etching apparatus having the same

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Seoul, South Korea

Seeyub Yang