Globalfoundries Inc.

Texas Instruments Corporation

Icera, Inc.

Globalfoundries U.S. Inc.

See Taur Lee

Abdellatif Bellaouar

Robert Bogdan Staszewski

Sher Jiung Fang

Dirk Leipold

Sher Jiun Fang

Tajinder Manku

James Fred Salzman

Solti Peng

Mehmet T Ozgun

Sherif H K Embabi

Chi Zhang

Transmitters having increased efficiency, such as may be useful in millimeter-wave devices. A semiconductor device, comprising a transmitter, comprising a modulator configured to receive a differential input signal having a first frequency and provide a differential modulated signal having the first frequency and a first clock phase; a series comprising one or more frequency multipliers, wherein the series of frequency multipliers is configured to receive the differential modulated signal and provide a differential second signal having a second frequency greater than the first frequency and having a second clock phase; and an output transformer configured to receive the differential second signal and transform the differential second signal to a single-ended output signal. Methods of using such transmitters. Systems for manufacturing devices comprising such transmitters.

Transmitter unit suitable for millimeter wave devices

Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

Multi-channel power combiner with phase adjustment

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

Injection lock power amplifier with back-gate bias

The disclosure provides a circuit structure including a current source including at least one FDSOI transistor having a back-gate terminal, wherein the current source generates a current proportionate to an absolute temperature of the circuit structure; a first current mirror electrically coupled to the current source and a gate terminal of a device transistor, wherein the first current mirror applies a gate bias to the device transistor based on a magnitude of the current, and wherein a source or drain terminal of the device transistor includes an output current of the circuit structure; and an adjustable voltage source coupled to the back-gate terminal of the at least one FDSOI transistor of the current source, wherein the adjustable voltage source applies a selected back-gate bias voltage to the back-gate terminal of the at least one FDSOI transistor to adjust the current to compensate for process variations of the device transistor.

Circuit structure for adjusting PTAT current to compensate for process variations in device transistor

We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

Power amplifier for millimeter wave devices

We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

Methods, apparatus, and system for frequency doubler using a passive mixer for millimeter wave devices

The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.

Fully depleted silicon on insulator power amplifier

Embodiments of the present disclosure provide a transmitter system including: a source follower (SF) sub-stage having a pair of transistors, one being coupled to a biasing voltage at a gate terminal thereof, and the other including a fully depleted semiconductor on insulator (FDSOI) transistor coupled to an input signal at a gate terminal thereof, and coupled to a calibration voltage at a back-gate terminal thereof. A mixer sub-stage includes a mixer input node coupled to the SF output node of the pair of transistors of the SF sub-stage, and the mixer input node is electrically coupled in parallel to two FDSOI mixer transistors, with the FDSOI mixer transistor being electrically coupled to a respective back-gate voltage. The FDSOI mixer transistors each include a gate terminal coupled to an input voltage, while a second source/drain terminal of the FDSOI mixer transistors are each electrically coupled to a mixer output node.

Transmitter system and method of calibration

A transmitter architecture having a single signal path or hardware to cover WCDMA/EDGE/GSM applications, and requires no SAW at the transmitter outputs. The transmitter architecture allows for a transmit convergence feature. A passive mixer with unique driver and furthermore using native devices available from the CMOS process for the mixer cores enables low voltage and low power design, low output noise and high linearity. A digital variable gain amplifier has the capability to cover wide output dynamic range operated from low supply voltage and interfaced digitally with the baseband circuit without DAC. A single transformer is used to combine the outputs from the WCDMA/EDGE and GSM drivers and subsequently convert the differential signal paths into a single-ended signal. RF switches are used to divert the output from the transformer to different bands and applications.

Passive transmitter architecture with switchable outputs for wireless applications

A driver circuit for supplying a drive signal to a mixer circuit comprising a first and second circuit branch and an operational amplifier. The first circuit branch receives an input signal and a bias signal. The second circuit branch receives the input signal. The operational amplifier has a first input connected to a junction node of the first circuit branch and a second input connected to a junction node of the second circuit branch. The operational amplifier is arranged to provide an operational amplifier output signal a second component of the second circuit branch so that a voltage at the junction node of the second circuit branch is equal to a voltage at the junction node of the first circuit branch. The voltage is dependent on the input signal and providing the drive signal.

Driver circuit and a mixer circuit receiving a signal from the driver circuit

Method and circuitry for controlling duty cycle of an input signal towards a desired value comprising a sequence of at least two inverters arranged in series and feedback circuitry. A first inverter is arranged to receive the input signal and a last inverter is arranged to output a signal having the same frequency as the input signal. The output signal is an adjusted version of the input signal. The feedback circuitry is arranged to receive the output signal and comprises a comparing and supplying means. The comparing means compares the output signal with a reference signal indicative of a desired value and generates a feedback signal based on the comparison of the output and reference signal. The supplying means supplies the feedback signal to adjust operating conditions of at least one of the inverters, such that the duty cycle of the output signal is controlled towards the desired value.

Duty cycle correction

Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.

Growing community of inventors

Allen, TX, United States of America

See Taur Lee