Gelcore, LLC

Lumination LLC

Sebastien Libon

Ivan Eliashevich

Stanton Earl Weaver, Jr

Bryan S Shelton

Chen-Lun Hsing Chen

Steven Francis LeBoeuf

Mehmet Arik

Thomas Frederick Soules

Stephen Daley Arthur

David Mulford Shaddock

Hari S Venugopalan

In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.

Laser lift-off of sapphire from a nitride flip-chip

A light emitting diode () has a backside and a front-side with at least one n-type electrode () and at least one p-type electrode () disposed thereon defining a minimum electrodes separation (d). A bonding pad layer () includes at least one n-type bonding pad () and at least one p-type bonding pad () defining a minimum bonding pads separation (d) that is larger than the minimum electrodes separation (d). At least one fanning layer () interposed between the front-side of the light emitting diode () and the bonding pad layer () includes a plurality of electrically conductive paths passing through vias () of a dielectric layer () to provide electrical communication between the at least one n-type electrode () and the at least one n-type bonding pad () and between the at least one p-type electrode () and the at least one p-type bonding pad ().

Flip-chip light emitting diode device without sub-mount

Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (). A metal is applied to the drilled openings to produce a plurality of via arrays (). The LED dice () are flip-chip bonded onto a frontside () of the sub-mount wafer (). The p-type and n-type contacts of each flip-chip bonded LED () electrically communicate with a solderable backside () of the sub-mount wafer () through a via array (). A thermal conduction path () is provided for thermally conducting heat from the flip-chip bonded LED dice () to the solderable backside () of the sub-mount wafer (). Subsequent to the flip-chip bonding, the sub-mount wafer () is separated to produce the surface mount LED packages.

LED power package

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Tervuren, Belgium

Sebastien Libon