Soitec

S.o.i.tec Silicon on Insulator Technologies

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat À L'energie Atomique (cea)

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Sébastien Kerdiles

Fabrice Letertre

Hubert Moriceau

Nicolas Posseme

Shay Reboh

Walter Schwarzenbach

Daniel Delprat

Frédéric Allibert

Aziz Alami-Idrissi

Eric Neyret

Patrick Reynaud

Christophe Maleville

Olivier Rayssac

Alexandre Vaufredaz

Frédéric Metral

Carine Duret

Didier Landru

Nadia Ben Mohamed

Nicolas Daval

Cécile Aulnette

Carole David

Francois Boedt

Willy Michel

Laurent Grenouillet

Fabrice Nemouchi

Claire Fenouillet-Beranger

Alexandre Chibko

Ludovic Ecarnot

Cyrille Le Royer

Sylvain Maitrejean

Christophe Morales

Christelle Charpin-Nicolle

Frédéric Mazen

Pablo Acosta Alba

Jean Coignus

François Lefloch

Yves-Matthieu Le Vaillant

Guillaume Chabanne

Corinne Maunand Tussot

Mathieu Opprecht

Rémy Gassilloud

Benjamin Scarfogliere

Yves-Mathieu Le Vaillant

Xavier Schneider

Brigitte Soulier-Bouchet

Terry Francois

Aurelia Pierret

Angela Alvarez Alonso

Tussot Corinne Maunand

A method for making a device with superconductor qubit(s) including at least one JoFET formed by the following steps of: and wherein the materials and the thicknesses of the protective dielectric portion and of the protective dielectric layer are selected so as to prevent the laser pulse from reaching the first region, and melting the semiconductor of the second regions which forms, after cooling, a recrystallised semiconductor material having superconductor material properties.

Method for making an electronic device with superconductor qubit(s) including at least one JoFET

A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

Healing method before transfer of a semiconducting layer

A method of fabrication of a ferroelectric memory including a first electrode, a second electrode and a layer of active material made of hafnium dioxide HfOpositioned between the first electrode and the second electrode, where the method includes depositing a first electrode layer; depositing the layer of active material; doping the layer of active material; depositing a second electrode layer; wherein the method includes sub-microsecond laser annealing of the layer of doped active material.

Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory

The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

Process for manufacturing a composite structure

A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950&#xb0; C. for at least 10 minutes.

Method for manufacturing a semiconductor on insulator structure having low electrical losses

Embodiments of the invention relate to a process for fabricating a silicon-on-insulator structure comprising the following steps: providing a donor substrate and a support substrate, only one of the substrates being covered with an oxide layer; forming, in the donor substrate, a weak zone; plasma activating the oxide layer; bonding the donor substrate to the support substrate in a partial vacuum; implementing a bond-strengthening anneal at a temperature of 350&#xb0; C. or less causing the donor substrate to cleave along the weak zone; and carrying out a heat treatment at a temperature above 900&#xb0; C. A transition from the temperature of the bond-strengthening anneal to the temperature of the heat treatment may be achieved at a ramp rate above 10&#xb0; C./s.

Process for fabricating a silicon-on-insulator structure

The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.

Process for thinning the active silicon layer of a substrate of 'silicon on insulator' (SOI) type

Method for manufacturing a semiconductor-on-insulator structure having low electrical losses

The present invention relates to a process for preparing semiconductor-on-insulator type structures that include a semiconductor layer of a donor substrate, an insulator layer and a receiver substrate. The process includes bonding of the donor substrate onto the receiver substrate, with at least one of the substrates being coated with an insulator layer, and forming at the bonding interface a so-called trapping interface of electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor-on-insulator type structure that includes such a trapping interface.

Charge reservoir structure

A method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Method for molecular bonding of silicon and glass substrates

The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions that are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Method for transferring a layer from a donor substrate onto a handle substrate

A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2, respectively, wherein T1 is less than or equal to T2, T1 is between 1200&#xb0; C. and 1300&#xb0; C., T2 is between 1240&#xb0; C. and 1300&#xb0; C., and when T1 is below 1240&#xb0; C., then T2 is above 1240&#xb0; C.

Process for fabricating a silicon-on-insulator structure employing two rapid thermal annealing processes, and related structures

Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure

The invention relates to finishing a substrate of the semiconductor-on-insulator (SeOI) type comprising an insulator layer buried between two semiconducting material layers. The method successively comprises routing the annular periphery of the substrate so as to obtain a routed substrate, and encapsulating the routed substrate so as to cover the routed side edge of the buried insulator layer by means of a semiconducting material.

Method for finishing a substrate of the semiconductor-on-insulator type

The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Growing community of inventors

Saint-Ismier, France

Sébastien Kerdiles