Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Sebastien Gallois-Garreignot

Philippe Delpech

Denis Rideau

Vincent Fiori

Eric Sabouret

Clement Tavernier

A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the &#x3c;110&#x3e; type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

PMOS transistor with improved mobility of the carriers

A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Semiconductor device comprising a crack stop structure

Growing community of inventors

Grenoble, France

Sebastien Gallois-Garreignot