Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (rousset) Sas

Sébastien Cremer

Charles Baudot

Alain Chantre

Philippe Delpech

Stephane Monfray

Denis Pellissier-Tanon

Nathalie Vulliet

Frédéric Boeuf

Badhise Ben Bakir

Christophe Regnier

Jean-Christophe Giraudin

Thomas Ferrotti

Michel Marty

Hélène Duprez

Maurin Douix

Marc Vernet

Sylvie Bruyere

Frédérìc Lalanne

Sébastien Gaillard

Cédric Perrot

Claire Richard

Emmanuelle Serret

The present disclosure relates to a method of making an electronic device comprising a first wafer including at least one trench and a second wafer, the second wafer being bonded, by hybrid bonding, to the first wafer, so as to form, at the level of the trench, at least one enclosed space, empty or gas-filled.

Thermal and electrical insulation structure

A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.

Waveguide of an SOI structure

The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Phase modulator device and method

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

Germanium photodiode

A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

Vertical photodiode

The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.

Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer

The invention relates to a III-V heterostructure laser device () arranged in and/or on silicon, comprising: The optical rib waveguide () is oriented so that at least one Bragg grating () is arranged on that side () of the slab waveguide () which is proximal relative to the gain medium () and in that the rib () is placed on that side () of the slab waveguide () that is distal relative to the gain medium ().

Laser device and process for fabricating such a laser device

An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Integrated electro-optic modulator

A method is for making a photonic chip including EO devices having multiple thicknesses. The method may include forming a first semiconductor layer over a semiconductor film, forming a second semiconductor layer over the first semiconductor layer, and forming a mask layer over the second semiconductor layer. The method may include performing a first selective etching of the mask layer to provide initial alignment trenches, performing a second etching, aligned with some of the initial alignment trenches and using the first semiconductor layer as an etch stop, to provide multi-level trenches, and filling the multi-level trenches to make the EO devices having multiple thicknesses.

Growing community of inventors

Sassenage, France

Sébastien Cremer