Tokyo Electron Limited

Sebastian Ulrich Englemann

Takashi Ando

Vijay Narayanan

Eduard Albert Cartier

Hiroyuki Miyazoe

Qingyun Yang

Devi Koty

A resistive random access memory (RERAM) apparatus and method for forming the apparatus are provided. Oxygen content control in the RERAM is provided. To provide oxygen content control, a via to an electrode of the RERAM is formed utilizing an oxygen-free plasma etch step. In one embodiment, the dielectric within which the via is formed is silicon nitride (SiN). In exemplary embodiments, the plasma chemistry is a hydrofluorocarbon (CHF)-based plasma chemistry or a fluorocarbon (CF)-based plasma chemistry. In one embodiment, the resistive layer of the RERAM is a metal oxide. In another embodiment, the oxygen concentrations in the electrode of the RERAM under the via and outside the via are the same after formation of the via.

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Armonk, NY, United States of America

Sebastian Ulrich Englemann