Robert Boschgmbh

Sebastian Strache

Ricardo Erckert

Karl Oberdieck

Marco Graf

Michael Maercker

Thoralf Rosahl

Jan Homoth

Stephan Schwaiger

Hadiuzzaman Syed

Oliver Grossmann

Heiko Nitsche

Jonathan Winkler

Johannes Hirschle

Christoph Friederich

Christian Maier

Volker Betz

Tobias Zahn

Frank Zander

Tatiana Barsukova

Dominik Alexander Ruoff

Manuel Riefer

Manuel Horvath

Alexander Barner

A power module, in particular a commutation cell for an inverter. The power module includes a circuit carrier, in particular a ceramic circuit carrier, and at least one or only one semiconductor switch half-bridge with two semiconductor switches, in particular power semiconductor switches, wherein the semiconductor switches are in particular integrally connected to the circuit carrier. The power module of the above-mentioned type includes a flexible circuit board, which is in particular integrally connected to the circuit carrier. The flexible circuit board is arranged in the area of the semiconductor switches. The power module comprises a temperature sensor, which is integrally connected to the flexible circuit board and is designed and arranged to sense a temperature of the circuit carrier in the area of the semiconductor switches, and in particular thus indirectly a temperature of the semiconductor switches, through the flexible circuit board.

Power module with a ceramic circuit carrier, a flexible circuit board and a temperature sensor

A method and device for adapting temperatures of semiconductor components. The device includes a first and second semiconductor component, and an evaluation unit. The evaluation unit is configured to ascertain a first and second temperature of the first and second semiconductor component, respectively, calculate a first and second temperature deviation, which represents a deviation of the first and second temperature from a reference temperature, respectively, and adapt a first gate voltage of the first semiconductor component and/or a second gate voltage of the second semiconductor component until the first temperature deviation and the second temperature deviation are smaller than or equal to a predefined maximum allowable temperature deviation from the reference temperature. The adaptation takes place only when a predefined allowable control range for the respective gate voltage is not exceeded, and when the first temperature and/or the second temperature is/are greater than the reference temperature.

Method and device for adapting temperatures of semiconductor components

A method and device for reducing voltage loads of semiconductor components of an inverter. The method includes: ascertaining a request to charge a battery of an electric system including the battery, the inverter, and an electric machine. The inverter including a series connection including a first and a second semiconductor component, and being configured to convert a direct voltage provided by the battery into an alternating voltage for the electric machine, and adapt a gate voltage of the first semiconductor component and/or of the second semiconductor component to interrupt a current flow between the battery and the electric machine during the charging. A voltage load of a gate oxide layer of the semiconductor components is reduced by decreasing the gate voltages of the first semiconductor component and of the second semiconductor component and/or a voltage load of a drain-source path of the semiconductor components being matched to one another.

Method and device for reducing voltage loads of semiconductor components of an inverter

A driver circuit for a low-inductance power module that has a connection and an output. The connection is connectable to the source contact of a power transistor and the output is connectable to the gate contact of the power transistor. The driver circuit is configured to produce, in a first operating mode, a first gate-source voltage for the gate contact of the power transistor and to provide the first gate-source voltage at the output of the driver circuit. The driver circuit is also configured to produce, in a second operating mode, during at least one preset minimum time span, a lower second gate-source voltage for the gate contact of the power transistor and to provide the second gate-source voltage at the output of the driver circuit.

Driver circuit for a low inductive power module and a low inductive power module with enhanced short circuit withstand capability

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Wannweil, Germany

Sebastian Strache