Merck Patent Gmbh

Sebastian Resch

Peer Kirsch

Henning Seim

Marc Tornow

Takuya Kamiyama

Jacob Woodruff

Itai Lieberman

Charith Nanayakkara

Julian Dlugosch

Shintaro Arai

Mansour Moinpour

Romana Pajkert

Gerd-Volker Roeschenthaler

The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Electronic switching device

The present invention relates to diamondoid compounds of formula ID-Z-(A-Z)-B-(Z-A)-Sp-G   (I)in which the occurring groups and parameters have the meanings given in claimto the use thereof for the formation of molecular layers, in particular self assembled monolayers (SAM), to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Diamondoid compounds

The present invention relates to a compounds of formula IR-(A-Z)—B—Z-A-(Z-A)-G  (I)in which the occurring groups and parameters have the meanings given in claim, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Aromatic compounds and use thereof for formation of molecular layers and fabrication of switching elements for memristive devices

A process is described for production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular, in memory elements of the ReRAM type. Additionally, compounds for production of the molecular layer are disclosed, as well as memory elements containing the molecular layer.

Process for the production of a molecular layer and electronic component comprising same

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Two bit memory device and method for operating the two-bit memory device and electronic component

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula IR-(A-Z)—(B)—(Z-A)-Sp-G  (I)in which the groups occurring have the meanings defined in Claim; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

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Darmstadt, Germany

Sebastian Resch