Infineon Technologies Dresden Gmbh & Co . Kg

Infineon Technologies Dresden Gmbh

Infineon Dresdon Gmbh & Co. Kg

Sebastian Pregl

Steffen Bieselt

Erhard Landgraf

Uwe Rudolph

Stephan Gerhard Albert

Matthias Rose

Dirk Meinhold

Daniel Koehler

Claudia Hengst

A sensor system with a first semiconductor die part and with a second semiconductor die part is proposed, wherein the first semiconductor die part has a microelectromechanical sensor element, wherein the second semiconductor die part covers the microelectromechanical sensor element, wherein the second semiconductor die part has a via for electrically contacting the microelectromechanical sensor element, in particular directly. A method for producing a sensor system is also proposed.

Sensor system with a microelectromechanical sensor element and method for producing a sensor system

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element

A micromechanical sensor includes a first and a second capacitive sensor element each having a first and a second electrode, wherein electrode wall surfaces of the first electrode and the second electrode are situated opposite one another in a first direction and form a capacitance, wherein the first electrodes are movable in a second direction, which is different than the first direction, in response to a variable to be detected, and the second electrodes are stationary. The electrode wall surface of the first electrode of the first sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the second electrode of the first sensor element. The electrode wall surface of the second electrode of the second sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the first electrode of the second sensor element.

A method for forming a MEMS device may include performing a silicon-on-nothing process to form a cavity in a monocrystalline silicon substrate at a first depth relative to a top surface of the monocrystalline silicon substrate; forming, in an electrically conductive electrode region of the monocrystalline silicon substrate, an electrically insulated region extending to a second depth that is less than the first depth relative to the top surface of the monocrystalline silicon substrate; and etching the monocrystalline silicon substrate to expose a gap between a first electrode and a second electrode, wherein the second electrode is separated from the first electrode, within a first depth region, by a first distance defined by the electrically insulated region and the gap, and wherein the second electrode is separated from the first electrode, within a second depth region, by a second distance defined by the gap.

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Dresden, Germany

Sebastian Pregl