Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Sebastian Pickel

Anna Strozecka-Assig

Wolfgang Schmid

Johannes Baur

Johannes Saric

Bernd Böhm

Anna Nirschl

Katharina Werner

In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producting an optoelectronic semiconductor chip

The invention relates to an optoelectronic semiconductor component, comprising a first semiconductor layer stack, which comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The optoelectronic semiconductor component additionally has a first contact element and a second contact element. The first semiconductor layer stack and the second semiconductor layer are arranged one above the other. The second semiconductor layer is electrically connected to the second contact element. A part of a first main surface of the first semiconductor layer stack adjoins the first contact element, and a part of the first main surface of the first semiconductor layer stack is structured such that both a plurality of protruding regions as well as connection regions are formed. The connection regions adjoin regions in which a part of the first main surface of the first semiconductor layer stack adjoins the first contact element, and the connection regions have a lateral extension which is greater than five times the average lateral extension of the protruding regions.

Optoelectronic semiconductor component comprising connection regions, and method for producing the optoelectronic semiconductor component

Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

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Wuppertal, Germany

Sebastian Pickel