Infineon Technologies Ag

Qimonda Ag

Sebastian Mosler

Joachim Schnabel

Andre Schaefer

Christoph Noelscher

Xaver Obergrussberger

The invention is concerned with a method for manufacturing a local wiring in a semiconductor device, comprising the manufacturing of at least two electrically conducting structures essentially in the same horizontal level in a layered stack on a substrate, the at least two electrically conducting structures being separated by a gap filled with at least one dielectric material, the gap being electrically bridged by conductive material, to form at least one contact element electrically connecting the at least two electrically conducting structures, whereby at least one contact element is produced in a single lithographic step.

Method for manufacturing a structure in a semiconductor device and a structure in a semiconductor device

An arrangement of several resistors jointly positioned in one and the same well of a semiconductor device, as well as to a semiconductor device including at least one such arrangement of resistors, wherein the resistors, when viewed in a longitudinal direction of the resistors, are displaced in relation to one another.

Arrangement of several resistors jointly positioned in a well of a semiconductor device, and a semiconductor device including at least one such arrangement

Growing community of inventors

Dresden, Germany

Sebastian Mosler