Texas Instruments Corporation

Sebastian Meier

Helmut Rinck

Bernhard Peter Lange

Mike Mittelstaedt

Michael Hans Enzelberger-Heim

Reiner Port

Scott Robert Summerfelt

Ernst Georg Muellner

Kai-Alexander Schachtschneider

Fromund Metz

Heinrich Wachinger

Mario Schmidpeter

Javier Gustavo Moreira

Markus Hefele

Michael Garbe

Javier Moreira

In some examples, a device comprises a substrate including a notch formed in a surface of the substrate and a semiconductor die positioned in the notch and including an electrochemical sensor on an active surface of the semiconductor die. The device also comprises a chemically inert member abutting the surface of the substrate and including an orifice in vertical alignment with the electrochemical sensor as a result of the semiconductor die being positioned in the notch. The device also comprises a compressed o-ring seal positioned between the chemically inert member and the active surface of the semiconductor die, the compressed o-ring seal circumscribing the electrochemical sensor.

O-ring seals for fluid sensing

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

Etching platinum-containing thin film using protective cap layer

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

Patterning platinum by alloying and etching platinum alloy

For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.

PH sensor

In examples, a method of manufacturing a fluid sensing package comprises coupling a semiconductor die to a first set of conductive terminals; positioning the semiconductor die within a socket, a fluid probe extending through a probe orifice in a lid of the socket; positioning a ring of the fluid probe on a fluid sensing portion of the semiconductor die by closing the lid of the socket; and using the fluid probe to apply fluid to an area of the fluid sensing portion circumscribed by the ring.

Manufacturing fluid sensing packages

A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

Dry etch process landing on metal oxide etch stop layer over metal layer and structure formed thereby

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

A method of detecting undesired surface effects while lasing a semiconductor during a laser marking, (dicing, fuse cutting or otherwise) process. A detection device is placed near the site of semiconductor lasing to detect erroneous laser markings resulting in the undesired surface effects. Upon identifying such a condition, lasing may be interrupted in-process.

Acoustic detection of laser failure mode in semiconductor environment

In accordance with at least one embodiment of the disclosure, a method of patterning platinum on a substrate is disclosed. In an embodiment, an adhesive layer is deposited over the substrate, a sacrificial layer is deposited over the adhesive layer, and a patterned photoresist layer is formed over the sacrificial layer. Then, the sacrificial layer is patterned utilizing the photoresist layer as a mask such that at least a portion of the adhesive layer is exposed. Subsequently, the top and sidewall surfaces of the patterned sacrificial layer and the first portion of the adhesive layer are covered by a platinum layer. Finally, the sacrificial layer and a portion of the platinum layer covering the top and sidewall surfaces of the sacrificial layer are etched, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.

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Munich, Germany

Sebastian Meier