Magarray, Inc.

Leland Stanford Junior University

Sebastian J Osterfeld

Shan X Wang

Heng Yu

Nader Pourmand

Robert L White

Drew A Hall

Richard Samuel Gaster

Richard Gaster

Aspects of the present disclosure include magnetic sensor devices having a mixed oxide passivation layer. Magnetic sensor devices according to certain embodiments include a magnetic sensor element and a passivation layer having two or more of zirconium oxide, aluminum oxide and tantalum oxide. Also provided are magnetic sensor devices having an encapsulating passivation layer. Magnetic sensor devices according to certain embodiments include a substrate, a magnetic sensor element and a passivation layer that encapsulates the magnetic sensor element. Methods for making a magnetic sensor with a passivation layer are described. Methods and systems for detecting one or more analytes in a sample are also described. Aspects further include kits having one or more of the subject magnetic sensor devices and a magnetic label.

Magnetic sensors with a mixed oxide passivation layer

Methods for analyte detection with magnetic sensors are provided. Aspects of the methods include producing a magnetic sensor device having a magnetically labeled analyte from a sample, such as a serum sample, bound to a surface of a magnetic sensor thereof; and obtaining a signal, e.g., a real-time signal, from the magnetic sensor to determine whether the analyte is present in the sample. Also provided are devices, systems and kits that find use in practicing the methods of the invention. The methods, devices, systems and kits of the invention find use in a variety of different applications, including detection of biomarkers, such as disease markers.

Analyte detection with magnetic sensors

Provided are magnetic sensors, which include a magnetic sensor element having a sensor surface modification and an inter-element area adjacent to the magnetic sensor element and having an inter-element area surface modification, where the sensor surface modification and the inter-element area surface modification provide a binding surface in the inter-element area. Also provided are devices, systems and methods in which the subject magnetic sensors find use.

Devices and methods for increasing magnetic sensor sensitivity

Provided are magnetic sensors, which include a magnetic tunnel junction (MTJ) magnetoresistive element, a first electrode contacting at least a portion of a surface of the MTJ magnetoresistive element and extending beyond an edge of the surface of the MTJ magnetoresistive element, and a second electrode contacting at least a portion of an opposing surface of the MTJ magnetoresistive element and extending beyond an edge of the opposing surface of the MTJ magnetoresistive element, where facing surfaces of the extending portions of the first and second electrodes are non-overlapping. Also provided are devices, systems and methods in which the subject magnetic sensors find use.

Magnetic tunnel junction sensors and methods for using the same

Provided are high-throughput detection systems. The systems include a magnetic sensor device, a magnetic field source and a reservoir plate that includes a plurality of fluid reservoirs. The magnetic sensor device includes a support with two or more elongated regions each having a magnetic sensor array disposed at a distal end. Also provided are methods in which the subject high-throughput detection systems find use.

Systems and methods for high-throughput detection of an analyte in a sample

Double modulation of a magnetoresistive sensor entails modulating both an excitation (e.g., voltage or current) applied to the sensor and a tickling magnetic field applied to the sensor. The excitation and magnetic field are modulated at different frequencies fand f, respectively. As a result of the double modulation, the sensor output spectrum includes a carrier tone (CT) at frequency fand side tones (STs) at frequencies f&#xb1;f. A baseline relation between CT amplitude and ST amplitude is determined (e.g., by measuring CT and ST amplitude while drift occurs in the absence of a sample). During sensor operation, raw ST measurements are corrected using corresponding raw CT measurements to provide corrected ST measurements as the sensor output.

Temperature and drift compensation in magnetoresistive sensors

The present invention provides microfluidic devices constructed from four layers. The layers include a rigid substrate layer, a patterned rigid layer having thickness t, a patterned elastomeric layer having thickness greater than t, and a rigid support layer. Microfluidic structures in the devices are defined by the alignment of openings in the patterned rigid layer and the patterned elastomeric layer. The rigid support layer, rigid substrate layer, and patterned rigid layer may be made of any rigid material, including but not limited to plastic or silicon-containing materials, such as glass, quartz, or SiO-coated materials. Similarly, the patterned elastomeric layer may be made of any elastomeric material, including but not limited to polydimethylsiloxanes, polymethylmethacrylates, perfluoropolyethers, or combinations thereof. Microfluidic devices according to the present invention may include sensors or sensor arrays. The microfluidic devices are fabricated using the provided error-tolerant alignment, biocompatible process.

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Mountain View, CA, United States of America

Sebastian J Osterfeld