Sandisk Technologies Inc.

Sebastian J M Wicklein

Tanmay Kumar

Srikanth Ranganathan

Juan Pablo Saenz

Ming-Che Wu

A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, and includes a first word line portion and a second word line portion. The second word line portion of the word line includes a first conductive oxide material. The bit line is disposed in a second direction perpendicular to the first direction. The nonvolatile memory material includes a barrier oxide material layer and a second conductive oxide material layer, with the barrier oxide material layer disposed adjacent the second word line portion of the word line.

Methods for three-dimensional nonvolatile memory that include multi-portion word lines

A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a barrier material layer between the semiconductor material layer and the conductive oxide material layer, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, the bit line is disposed in a second direction perpendicular to the first direction. The barrier material layer has an ionic conductivity of greater than about 0.1 Siemens/cm @ 1000&#xb0; C.

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San Jose, CA, United States of America

Sebastian J M Wicklein