Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Sebastian Hoibl

Thomas Schwarz

Alexander F Pfeuffer

Korbinian Perzlmaier

Tobias Meyer

Albrecht Kieslich

Markus Broell

Christian Rumbolz

Michael Huber

Bernd Boehm

Georg Rossbach

Bernd Böhm

Jana Sommerfeld

Martin Herz

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

Method for producing radiation-emitting semiconductor chips, radiation-emitting semiconductor chip and radiation-emitting component

The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body () having a radiation-permeable surface (), and introducing structures () into the semiconductor body () on the radiation-permeable surface (), wherein the structures () are quasi-regular.

Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface

A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer.

Photolithographic methods of producing structures in radiation-emitting semiconductor components

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Kiefersfelden, Germany

Sebastian Hoibl