Robert Boschgmbh

Sebastian Guenther

Johannes Classen

Guenther-Nino-Carlo Ullrich

Denis Gugel

Timm Hoehr

Markus Linck-Lescanne

Antoine Puygranier

Jochen Reinmuth

Cristian Nagel

Tobias Sebastian Frey

Carsten Geckeler

Nicolaus Ulbrich

Rolf Kaack

Volker Materna

Klaus Petzold

Reinhold Wolpert

Stefan Kiesel

Nicole Schittenhelm

Zoltan Szkupien

Pia Bustian-Todorov

Harald Steffes

A micromechanical inertial sensor. The inertial sensor includes a first sensor element for measuring an inertial variable in a first frequency band, and a second sensor element for measuring a periodic acceleration in a second frequency band. The second frequency band is at least partially above the first frequency band.

Micromechanical inertial sensor

A micromechanical structure, including a substrate, a seismic mass movable with respect to the substrate, and first and second detectors. A first direction and a second direction perpendicular to the first direction define a main extension plane of the substrate. The first and second detectors respectively detect a translatory deflection, and a rotatory deflection. The seismic mass is connected to the substrate via an anchoring element and four torsion spring sections. The first detector include an electrode structure, including first electrodes attached at the seismic mass and second electrodes attached at the substrate. The first and second electrodes have a two-dimensional extension in the second direction and in a third direction perpendicular to the main extension plane. The anchoring element includes first and second sections with a gap between them. A connecting element connects two first electrodes and is guided through the gap.

Micromechanical structure and micromechanical sensor

A micromechanical structure for an acceleration sensor includes a movable seismic mass including electrodes, the seismic mass being attached to a substrate with the aid of an attachment element; first fixed counter electrodes attached to a first carrier plate; and second fixed counter electrodes attached to a second carrier plate, where the counter electrodes, together with the electrodes, are situated nested in one another in a sensing plane of the micromechanical structure, and where the carrier plates are situated nested in one another in a plane below the sensing plane, each being attached to a central area of the substrate with the aid of an attachment element.

Micromechanical structure for an acceleration sensor

A micromechanical z-acceleration sensor, including a seismic mass element including a torsion spring; the torsion spring including an anchor element, with the aid of which the torsion spring is connected to a substrate; the torsion spring being connected at both ends to the seismic mass element with the aid of a bar-shaped connecting element designed as normal with respect to the torsion spring in the plane of the seismic mass element.

Micromechanical z-acceleration sensor

A micromechanical component is provided, the micromechanical component enclosing a cavity, the micromechanical component including a sensor element situated in the cavity, and the micromechanical component including a getter situated in the cavity. The micromechanical component includes a structure, situated between the sensor element and the getter, which is designed in such a way that a particle that is desorbed by the getter is sorbed onto and/or into an area of the micromechanical component that is spaced apart from the sensor element.

Micromechanical component

A getter device for a micromechanical component, having a metallic getter structure that is situated in a cavity of the micromechanical component. The getter structure is heatable using a defined electric current. It is possible to evaporate the material of the getter structure in a defined manner.

Getter device for a micromechanical component

A method for manufacturing a micromechanical structure, and a micromechanical structure. The micromechanical structure encompasses a first micromechanical functional layer, made of a first material, that comprises a buried conduit having a first end and a second end; a micromechanical sensor structure having a cap in a second micromechanical functional layer that is disposed above the first micromechanical functional layer; an edge region in the second micromechanical functional layer, such that the edge region surrounds the sensor structure and defines an inner side containing the sensor structure and an outer side facing away from the sensor structure; such that the first end is located on the outer side and the second end on the inner side.

Method for manufacturing a micromechanical structure, and micromechanical structure

A micromechanical acceleration sensor is described which includes a substrate and a seismic mass which is movably situated with respect to the substrate in a detection direction. The micromechanical sensor includes at least one damping device for damping motions of the seismic mass perpendicular to the detection direction.

Acceleration sensor having a damping device

A sensor device includes a base plate, a seismic mass having an upper side and a lower side that is situated such that given acceleration of the base plate the seismic mass is capable of being displaced in a direction oriented non-parallel to the upper side and/or to the lower side, at least one raised stop on the seismic mass, and a detection and evaluation device that is adapted to acquire a displacement movement of the seismic mass relative to the base plate and, taking into account the displacement movement, to determine an item of information relating to an acceleration of the sensor device and/or to a force acting on the sensor device, the seismic mass having at least one resilient area that includes the at least one stop and at least one displaceable remaining area, and the resilient area being connected to the remaining area via at least one spring. A method is for manufacturing a sensor device.

Sensor device and method for manufacturing a sensor device

A sensor for detecting electromagnetic radiation, having a detection element; and at least one electrode; the detection element and the at least one electrode forming a variable capacitor, and a change in the capacitance of the capacitor being caused by the detected electromagnetic radiation.

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Tuebingen, Germany

Sebastian Guenther