Johann Wolfgang Goethe-universitat Frankfurt A.m.

Sebastian Boppel

Hartmut Roskos

Alvydas Lisauskas

Viktor Krozer

The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET, FET), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure () can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.

Monolithically integrated antenna and receiver circuit

A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.

Growing community of inventors

Frankfurt-am-Main, Germany

Sebastian Boppel