Stmicroelectronics S.r.l.

Consiglio Nazionale Delle Ricerche

Università Degli Studi "G. D'annunzio" Chieti-Pescara

Sebania Libertino

Ferruccio Frisina

Salvatore Coffa

Mario Giuseppe Saggio

Massimo Cataldo Mazzillo

Piero Fallica

Salvatore Lombardo

Rosario Corrado Spinella

Rosaria Anna Puglisi

Manuela Fichera

Giovanni Aldo Maira

Arcangelo Merla

Salvatore Antonino Lombardo

Antonio Maria Chiarelli

In various embodiments, the present disclosure provides devices and systems for detecting the blood pressure of a user. In one embodiment, an optoelectronic device includes an array of avalanche photodiodes operating in Geiger mode. A tunable optical filter is optically coupled to the array and receives a light beam reflected from a vascularized tissue of the user, in response to the vascularized tissue being illuminated by an optical source.

Tunable optoelectronic device and blood pressure sensor including the same

A nanometric device is disclosed for the measurement of the electrical conductivity of individual molecules and their quantum effects having: a substrate surmounted by, in order, a barrier to diffusion layer, an electrically conductive layer, a 'bounder' layer and an electrically insulating layer; and a suitable miniaturized probe; wherein the 'bounder' layer and the electrically insulating layer have at least one nanometric pore formed within, the base of which consists of the electrically conductive layer. A method for the production of a nanometric device for the measurement of the electrical conductivity of individual molecules and their quantum effects, and a method for the measurement of the electrical conductivity and quantum effects of a molecule of interest, are also disclosed.

Nanometric device for the measurement of the conductivity and quantum effects of individual molecules and methods for the manufacture and use thereof

The high-gain photodetector is formed in a semiconductor-material body which houses a PN junction and a sensitive region that is doped with rare earths, for example erbium. The PN junction forms an acceleration and gain region separate from the sensitive region. The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region. Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction, which is transparent to light, can be captured by an erbium ion in the sensitive region, so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same

A semiconductor device for electro-optic applications includes a rare-earth ions doped P/N junction integrated on a semiconductor substrate. The semiconductor device may be used to obtain laser action in silicon. The rare-earth ions are in a depletion layer of the doped P/N junction, and are for providing a coherent light source cooperating with a waveguide defined by the doped P/N junction. The doped P/N junction may be the base-collector region of a bipolar transistor, and is reverse biased so that the rare-earth ions provide the coherent light.

Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device

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Catania, Italy

Sebania Libertino