Asm IP Holding B.v.

Other

Basf Se Corporation

Greencentre Canada

Sean T Barry

Antti H Rahtu

Yamile A M Wasslen

Hagen Wilmer

Torben Adermann

Daniel Loeffler

Timothy James Clark

Falko Abels

Carolin Limburg

Monica Gill

Matthew Griffiths

Jason Coyle

Jeffrey Jm Hastie

Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

ALD of metal-containing films using cyclopentadienyl compounds

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R, R, R, and Rare independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol. 

Process for the generation of thin inorganic films

ALD of hafnium-containing films using cyclopentadienyl compounds

ALD of metal-containing films using cyclopentadienly compounds

The present application provides precursor compounds useful for deposition of a groupmetal on a substrate, for example, a microelectronic device substrate, as well as methods of synthesizing such precursor compounds. The precursor compounds provided are mono-metallic compounds comprising a diaminocarbene (DAC) having the general formula: 'DAC-M-X', where the diaminocarbene is an optionally substituted, saturated N-heterocyclic diaminocarbene (sNHC) or an optionally substituted acyclic diaminocarbene, M is a groupmetal, such as copper, silver or gold; and X is an anionic ligand. Also provided are methods of synthesizing the precursor compounds, metal deposition methods utilizing such precursor compounds, and to composite materials, such as, e.g., microelectronic device structures, and products formed by use of such precursors and deposition methods.

Group 11 mono-metallic precursor compounds and use thereof in metal deposition

Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material, wherein the metal is zirconium. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

ALD of zirconium-containing films using cyclopentadienyl compounds

Growing community of inventors

Ottawa, Canada

Sean T Barry