Crystal Is, Inc.

Sean P Branagan

Robert T Bondokov

Jianfeng Chen

James R Grandusky

Thomas Miebach

Leo J Schowalter

Toru Kimura

Keisuke Yamaoka

Shichao Wang

Justin A Mark

Kasey Hogan

Naoki Ishigami

In various embodiments, polycrystalline AlN ceramics, single-crystalline AlN boules, and/or single-crystalline AlN substrates are infused with tungsten present on the surface and/or within the bulk thereof. The tungsten-infused AlN materials may be utilized to fabricate electronic and/or optoelectronic (e.g., light-emitting) devices thereon.

Tungsten-infused aluminum nitride crystals and methods of forming them

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

Control of basal plane dislocations in large aluminum nitride crystals

In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Aluminum nitride single crystals having controllable color and methods of forming them

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Sean P Branagan