Cisco Technology, Inc.

Macom Technology Solutions Holdings, Inc.

Cisco Technologies, Inc.

Sean P Anderson

Vipulkumar K Patel

Mark Andrew Webster

Dominic F Siriani

Igal I Bayn

Prakash B Gothoskar

Weizhuo Li

Kalpendu Shastri

Matthew Joseph Traverso

Donald Benjamin Adams

Hiroyuki Yamazaki

Jock T Bovington

Kadaba Lakshmikumar

Ravi Sekhar Tummidi

Alexander Christopher Kurylak

Ming Gai Stanley Lo

Manohar Bhavsar Nagaraju

Haike Zhu

Donald J Adams

Weizhou Li

An arrayed waveguide grating device includes an input coupler configured to receive a light signal and split the light signal into a plurality of output light signals. The device also includes a plurality of waveguides optically connected to the input coupler, each waveguide having a plurality of waveguide portions having respective sensitivities to variance in one or more parameters associated with operating of the optical arrayed grating device. Lengths of the respective portions are determined such that each waveguide applies a respective phase shift to the output light signal that propagates through the waveguide and the plurality of waveguides have at least substantially same change in phase shift with respective changes in the one or more parameters associated with operation of the device. An output coupler is optically connected to the plurality of waveguides to map respective light signals output from the plurality of waveguides to respective focal positions.

Arrayed waveguide gratings with stabilized performance under varying parameters

Disclosed are various embodiments for a multi-tip laser coupler with improved alignment guidance. A photonic integrated circuit (PIC) includes an input interface, an output interface, and a waveguide array. The waveguide array includes a first waveguide, a second waveguide, and a third waveguide. The first waveguide and the third waveguide are coupled to the input interface and are not coupled to the output interface. The second waveguide is coupled to the input interface and the output interface. Further, the second waveguide is positioned parallel to and between the first waveguide and a third waveguide. The second waveguide includes a tapered body such that an output end of the second waveguide coupled to the output interface is wider than an input end of the second waveguide coupled to the input interface.

Multi-tip waveguide coupler with improved alignment guidance

Optical waveguides may include a substrate and a silicon based optical waveguide supported on the substrate. The silicon based optical waveguide may include a central ridge portion and a plurality of spaced apart wing portions connected through connecting portions. The number of wing portions may be greater than two. The central ridge portion may have a central ridge lateral width extent greater than a lateral width extent of at least one of the wing portions. Optical waveguides may include a substrate, a silicon based optical waveguide supported on the substrate, and a concentrator supported on the substrate and positioned within a lateral width extent of the silicon based optical waveguide and outside of a height extent of the silicon based optical waveguide. The optical waveguides may be included as part of an optical modulator.

Apparatus for reduction of power-dependent optical loss in silicon photonic devices

A battery-based portable power supply includes a battery pack that is configured to protect the batteries and components therewithin. An outer tube protects inner components from impacts that can be expected in transport and usage. A suspension system within a battery pack of the power supply protects the batteries from jolts and bumps. The batteries can be removed and replaced. A switch structure for actuating the electrical outlet is disposed within the battery pack. The switch structure is actuated by compressing the battery pack from outside.

Portable energy storage and power supply system

Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.

Deposited Si photodetectors for silicon nitride waveguide based optical interposer

Semiconductor electro-optical modulators which receives an input optical signal and provides a modulated output optical signal based on an input electrical signal are disclosed. The semiconductor electro-optical modulator may comprise at least one electrical transmission line adapted to carry the input electrical signal and a semiconductor electro-optical phase shifter waveguide electrically coupled to the at least one electrical transmission line. An optical path length of the semiconductor electro-optical phase shifter waveguide between a modulation begin plane of the semiconductor electro-optical modulator and a modulation end plane of the semiconductor electro-optical modulator may be greater than an electrical path length of the electrical transmission line between the modulation begin plane of the semiconductor electro-optical modulator and the modulation end plane of the semiconductor electro-optical modulator.

Semiconductor electro-optical modulator

Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Germanium photodetector with extended responsivity

A driver circuit for a Mach-Zehnder modulator is provided that includes a first driver having an input to receive one of an input data or input data complement, and an output to be coupled to a first application voltage node associated with a first arm of a Mach-Zehnder modulator. The driver circuit includes a second driver having an input to receive the other of the input data complement or input data, and an output to be coupled to a second application voltage node associated with the first arm of the Mach-Zehnder modulator. The first driver and the second driver differentially drive the first and second application voltage nodes associated with the first arm of the Mach-Zehnder modulator to result in a voltage swing associated with a voltage applied to the first arm that is twice the supply voltage.

High swing AC-coupled Mach-Zehnder interferometer (MZI) driver

A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

Germanium photodetector coupled to a waveguide

A wafer comprising: a silicon substrate; a base layer of a predetermined thickness of a III-V semiconductor material bonded with the silicon substrate; and at least one layer grown on the base layer to form a plurality of quantum dot lasers.

Quantum dot lasers integrated on silicon submount with mechanical features and through-silicon vias

An apparatus, comprising: a silicon substrate; and a quantum dot laser comprising: a base layer of a III-V semiconductor material, bonded with the silicon substrate; and at least one layer grown epitaxially from the base layer, wherein the at least one layer comprises a quantum dot layer. The apparatus further comprises a photonic element, fabricated on the silicon substrate and including a waveguide optically aligned with the quantum dot layer.

Silicon photonics co-integrated with quantum dot lasers on silicon

A system and related method and assembly are disclosed. The system comprises one or more optical fibers configured to propagate one or more optical signals. The system further comprises at least a first cylindrical lens element fixedly connected with the one or more optical fibers and configured to expand the one or more optical signals along a predefined dimension. The system further comprises at least a second cylindrical lens element optically coupled with the first cylindrical lens element and configured to condense the expanded one or more optical signals along the predefined dimension.

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Macungie, PA, United States of America

Sean P Anderson