The Ohio State University

University of Delaware

Sean L Rommel

Karl D Hobart

Phillip E Thompson

Roger Lake

Paul Berger

Paul R Berger

Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

Method of making interband tunneling diodes

Si-based resonant interband tunneling diodes and method of making interband tunneling diodes

Growing community of inventors

Champaign, IL, United States of America

Sean L Rommel