Entegris, Inc.

Sean Kim

Emanuel Israel Cooper

Steven M Bilodeau

Min-Chieh Yang

Hsing-Chen Wu

Sheng-Hung Tu

SeongJin Hong

WonLae Kim

Eric Hong

Makonnen Payne

Wen-Haw Dai

Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

Compositions and methods for etching silicon nitride-containing substrates

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

Cleaning compositions for removing post etch residue

Growing community of inventors

Gyeonggi-do, South Korea

Sean Kim