Fei Comapny

Sean Kellogg

Anthony Graupera

Mark Utlaut

Shouyin Zhang

N William Parker

Gregory A Schwind

Tom Miller

Andrew B Wells

James B McGinn

Mostafa Maazouz

Noel S Smith

Aurelien Philippe Jean Maclou Botman

Luigi Mele

Walter Skoczylas

Leon Van Kouwen

Dustin Laur

Antonius Bastianus Wilhelmus Dirriwachter

Thomas Gary Miller

Kun Liu

Lynwood W Swanson

William N Parker

Jiri Zbranek

Mark W Utlaut

Aurélien Botman

Lynwood Swanson

Antonius Basitianus Wilhelmus Dirriwachter

Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

Methods for determining the virtual source location of a liquid metal ion source

A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

Collision ionization source

A collision ionization ion source comprising:

Collision ionization ion source

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

Imaging and processing for plasma ion source

An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma chamber and nearby parts which are at ground potential, such as a conductive shield. One or more cooling devices cool the plasma chamber by using evaporative cooling and heat pipes to dissipate the heat from the plasma chamber into a surrounding environment.

High voltage isolation of an inductively coupled plasma ion source with a liquid that is not actively pumped

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

Method for attachment of an electrode into an inductively-coupled plasma

An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source

An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.

Automated ion beam idle

System for attachment of an electrode into a plasma source

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

Encapsulation of electrodes in solid media

The state of an emitter can be determined by measurements of how the current changes with the extraction voltage. A field factor &#x3b2; function is determined by series of relatively simple measurements of charged particles emitted at different conditions. The field factor can then be used to determine derived characteristics of the emission that, in the prior art, were difficult to determine without removing the source from the focusing column and mounting it in a specialized apparatus. The relations are determined by the source configuration and have been found to be independent of the emitter shape, and so emission character can be determined as the emitter shape changes over time, without having to determine the emitter shape and without having to redefine the relation between the field factor and the series of relatively simple measurements, and the relationships between the field factor and other emission parameters.

Determination of emission parameters from field emission sources

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Growing community of inventors

Portland, OR, United States of America

Sean Kellogg