Qucor Pty Limited

Sean Hearne

Andrew Steven Dzurak

Steven Prawer

David Norman Jamieson

Mladen Mitic

Eric Gauja

Changyi Yang

Soren Andresen

Toby Felix Hopf

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms () implanted in regions of a substrate () that are substantially intrinsic semiconductor. One or more doped surface regions () of the substrate () are metallized to form electrodes () and a counted number of dopant ions () are implanted in a region of the substantially intrinsic semiconductor.

Implanted counted dopant ions

Growing community of inventors

Co. Kildare, Ireland

Sean Hearne